Display apparatus manufacturing apparatus

Abstract

A thin film encapsulation manufacturing apparatus includes a first cluster configured to form a first inorganic layer on a first substrate, on which an emission unit is formed, by a sputtering process; a second cluster configured to form a first organic layer on the first inorganic layer on the first substrate conveyed from the first cluster by an organic deposition process; a first connection module configured to connect the first cluster and the second cluster, configured to convey the first substrate on which the first inorganic layer is formed from the first cluster to the second cluster, and configured to cool the first substrate in a non-contact manner; and a third cluster configured to form a second inorganic layer on the first organic layer on the first substrate conveyed from the second cluster by a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.

What is claimed is: 
     
         1 . A thin film encapsulation manufacturing apparatus comprising:
 a first cluster for forming a first inorganic layer on a first substrate on which an emission unit is formed by using a sputtering process;   a second cluster for forming a first organic layer on the first inorganic layer conveyed from the first cluster, by using an organic deposition process;   a first connection module for connecting the first cluster and the second cluster and conveying the first substrate on which the first inorganic layer is formed from the first cluster to the second cluster by cooling the first substrate in a non-contact manner; and   a third cluster for forming a second inorganic layer on the first organic layer conveyed from the second cluster, by using a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process.   
     
     
         2 . The thin film encapsulation manufacturing apparatus of  claim 1 , wherein the first connection module comprises a second substrate cooling unit that is installed spaced apart from the first substrate and cools the first substrate in the non-contact manner. 
     
     
         3 . The thin film encapsulation manufacturing apparatus of  claim 2 , wherein the second substrate cooling unit comprises:
 a second cooling plate disposed spaced apart from the first substrate; and   a second cooler that is connected to the second cooling plate and cools the second cooling plate.   
     
     
         4 . The thin film encapsulation manufacturing apparatus of  claim 3 , wherein a second refrigerant passage through which a second refrigerant that is circulated by the second cooler flows is formed in the second cooling plate. 
     
     
         5 . The thin film encapsulation manufacturing apparatus of  claim 3 , wherein at least a part of an outer surface of the second cooling plate is coated with a black body material. 
     
     
         6 . The thin film encapsulation manufacturing apparatus of  claim 1 ,
 wherein the first cluster comprises a plurality of first process chambers whose order is determined in one direction,   wherein the second cluster comprises a plurality of second process chambers whose order is determined in one direction,   wherein the third cluster comprises a plurality of third process chambers whose order is determined in one direction, and   wherein the first inorganic layer, the first organic layer, and the second inorganic layer are respectively formed in the first process chamber, the second process chamber, and the third process chamber in a same order among the plurality of first process chambers, the plurality of second process chambers, and the plurality of third process chambers that have the same order.   
     
     
         7 . The thin film encapsulation manufacturing apparatus of  claim 1 , wherein when the first substrate is conveyed, internal pressures of the first cluster and the first connection module or the first connection module and the second cluster are controlled to be the same. 
     
     
         8 . The thin film encapsulation manufacturing apparatus of  claim 1 , further comprising: a second connection module for connecting the second cluster and the third cluster and conveying the first substrate drawn from the second cluster to the third cluster. 
     
     
         9 . The thin film encapsulation manufacturing apparatus of  claim 8 , further comprising a third substrate cooling unit that is installed spaced apart from the first substrate and cools the first substrate in a non-contact manner. 
     
     
         10 . The thin film encapsulation manufacturing apparatus of  claim 8 , wherein the second connection module reverses the first substrate and conveys the first substrate from the second duster to the third duster. 
     
     
         11 . The thin film encapsulation manufacturing apparatus of  claim 8 , wherein when the first substrate is conveyed, internal pressures of the second cluster and the second connection module or the second connection module and the third duster are controlled to be the same. 
     
     
         12 . The thin film encapsulation manufacturing apparatus of  claim 1 , wherein the first connection module, the second duster, and the third cluster are repeatedly installed sequentially so that the first organic layer and the second inorganic layer are alternately stacked on the first inorganic layer. 
     
     
         13 . The thin film encapsulation manufacturing apparatus of  claim 1 , wherein the first cluster and the second cluster form the first inorganic layer and the first organic layer respectively by using downward deposition, and the third cluster forms the second inorganic layer by using upward deposition. 
     
     
         14 . The thin film encapsulation manufacturing apparatus of  claim 1 , further comprising: a loading cluster for receiving the first substrate from the outside and supplying the first substrate to the first cluster.