Resistive random access memory device

Abstract

A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

1 . A resistive random access memory device comprising:
 a first electrode;   a solid electrolyte made of metal oxide extending at least partially onto the first electrode;   a soluble second electrode, the first and second electrodes being respectively arranged on either side of the solid electrolyte made of metal oxide, the second electrode being configured to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, and   an interface layer including
 a transition metal from groups 3, 4, 5 or 6 of the periodic table; 
 a chalcogen element; 
 a soluble conductive element; 
   the interface layer extending at least partially onto the solid electrolyte made of metal oxide, the second electrode extending at least partially onto the interface layer.   
     
     
         2 . The device according to  claim 1 , wherein the transition metal from groups 3, 4, 5 or 6 of the periodic table is titanium Ti. 
     
     
         3 . The device according to  claim 1 , wherein the chalcogen element is tellurium Te. 
     
     
         4 . The device according to  claim 1 , wherein the second electrode comprises:
 an ion source layer made from a soluble conductive element and extending at least partially onto the interface layer;   a diffusion barrier made from a conductive material and extending at least partially onto the ion source layer;   an electrical contact layer made from a conductive material and extending at least partially onto the diffusion barrier;
 the diffusion barrier being configured to limit at least partially the diffusion of the conductive material from the electrical contact layer to the ion source layer over a given temperature range. 
   
     
     
         5 . The device according to  claim 4 , wherein the interface layer and the ion source layer comprise the same soluble conductive element. 
     
     
         6 . A method of manufacturing a resistive random access memory device according to  claim 1 , comprising:
 forming the first electrode;   forming, on the first electrode, the solid electrolyte made of metal oxide;   forming, on the solid electrolyte made of metal oxide, the interface layer;   forming, on the interface layer, the second electrode.   
     
     
         7 . The method according to  claim 6 , wherein forming the interface layer comprises:
 depositing, on the solid electrolyte made of metal oxide, a layer comprising the chalcogen element and the soluble conductive element;   depositing, on the layer comprising the chalcogen element and the soluble conductive element, a layer comprising the transition metal from groups 3, 4, 5 or 6 of the periodic table;   thermal annealing for the at least partial diffusion of the transition metal into the layer comprising the chalcogen element and the soluble conductive element, and for obtaining the interface layer;
 and wherein forming the second electrode comprises: 
   depositing, on the interface layer, an ion source layer comprising the soluble conductive element.   
     
     
         8 . The method according to  claim 6 , wherein forming the interface layer comprises:
 depositing, on the solid electrolyte made of metal oxide, a layer comprising the transition metal from groups 3, 4, 5 or 6 of the periodic table and the chalcogen element;   depositing, on the layer comprising the transition metal and the chalcogen element, a layer comprising the soluble conductive element;   thermal annealing for the at least partial diffusion of the soluble conductive element into the layer comprising the transition metal and the chalcogen element, and for obtaining the interface layer;
 and wherein forming the second electrode comprises: 
   depositing, on the interface layer, an ion source layer comprising the soluble conductive element.   
     
     
         9 . The method according to  claim 7 , wherein forming the second electrode comprises:
 depositing, on the ion source layer comprising the soluble conductive element, a diffusion barrier made from a conductive material;   depositing, on the diffusion barrier, an electrical contact layer made from a conductive material;
 the ion source layer, the diffusion barrier and the electrical contact layer forming the second electrode, the diffusion barrier being configured to limit at least partially the diffusion of the conductive material of the electrical contact layer to the ion source layer over a given temperature range.