Patterned transparent conductors and related compositions and manufacturing methods

Abstract

A manufacturing method of a patterned transparent conductor includes: (1) providing a transparent conductor including nanowires formed of a metal; and (2) applying a percolation-inhibition composition to a portion of the transparent conductor to partially degrade nanowires included in the portion. The percolation-inhibition composition includes a complexing agent for the metal.

What is claimed is: 
     
         1 . A manufacturing method of a patterned transparent conductor, comprising:
 providing a transparent conductor including nanowires formed of a metal; and   applying a percolation-inhibition composition to a portion of the transparent conductor to partially degrade nanowires included in the portion,   wherein the percolation-inhibition composition includes a complexing agent for the metal.   
     
     
         2 . The manufacturing method of  claim 1 , wherein applying the percolation-inhibition composition includes printing the percolation-inhibition composition over the transparent conductor. 
     
     
         3 . The manufacturing method of  claim 2 , wherein printing the percolation-inhibition composition is via screen printing, gravure printing, or ink-jet printing. 
     
     
         4 . The manufacturing method of  claim 1 , wherein applying the percolation-inhibition composition includes applying a mask over the transparent conductor, and applying the percolation-inhibition composition to the portion through an opening in the mask. 
     
     
         5 . The manufacturing method of  claim 1 , wherein at least one nanowire included in the portion is severed at one or more locations along a length of the nanowire. 
     
     
         6 . The manufacturing method of  claim 1 , wherein the complexing agent is an amine or a polyamine. 
     
     
         7 . The manufacturing method of  claim 1 , wherein the complexing agent is selected from ammonia, bis(hexamethylene)triamine, ethylenediamine, diethylenetriamine, octylamine, decylamine, triethylenetetraamine, N-methylethylenediamine, N,N′-dimethylethylenediamine, N,N,N′-trimethylethylenediamine, N,N′-diisopropylethylenediamine, tetraethylpentaamine, polyethylenimine, lysine, ethanolamine hydrochloride, hydantoin, and thiourea. 
     
     
         8 . The manufacturing method of  claim 1 , wherein the complexing agent is an aminated polymer. 
     
     
         9 . The manufacturing method of  claim 1 , wherein the complexing agent is selected from halides, sulfides, thiocyanates, polysulfides, and thiosulfates. 
     
     
         10 . The manufacturing method of  claim 1 , wherein the percolation-inhibition composition further includes a reducing agent for the metal. 
     
     
         11 . The manufacturing method of  claim 1 , further comprising activating the percolation-inhibition composition by thermal treatment. 
     
     
         12 . A percolation-inhibition composition for application to conductive structures formed of a metal, comprising:
 a complexing agent for the metal;   a polymer binder; and   a solvent,   wherein the complexing agent has the formula:   
       
         
           
           
               
               
           
         
         where R 1 , R 2 , R 3 , and S are independently selected from hydride groups, alkyl groups, alkenyl groups, alkynyl groups, aryl groups, poly(alkylene oxide) groups, siloxane groups, and polysiloxane groups, L is selected from alkylene groups, alkenylene groups, alkynylene groups, arylene groups, poly(alkylene oxide) groups, siloxane groups, and polysiloxane groups, A and B are independently selected from nitrogen, phosphorus, arsenic, antimony, and bismuth, and n is an integer≧0, and 
         where for n>1: 
         L in different ones of the n units can be the same or different, and are independently selected from alkylene groups, alkenylene groups, alkynylene groups, arylene groups, poly(alkylene oxide) groups, siloxane groups, and polysiloxane groups, 
         S in different ones of the n units can be the same or different, and are independently selected from hydride groups, alkyl groups, alkenyl groups, alkynyl groups, aryl groups, poly(alkylene oxide) groups, siloxane groups, and polysiloxane groups, and 
         B in different ones of the n units can be the same or different, and are independently selected from nitrogen, phosphorus, arsenic, antimony, and bismuth. 
       
     
     
         13 . The percolation-inhibition composition of  claim 12 , wherein at least one of A and B is nitrogen. 
     
     
         14 . The percolation-inhibition composition of  claim 12 , wherein the complexing agent is selected from ammonia, bis(hexamethylene)triamine, ethylenediamine, diethylenetriamine, octylamine, decylamine, triethylenetetraamine, N-methylethylenediamine, N,N′-dimethylethylenediamine, N,N,N′-trimethylethylenediamine, N,N′-diisopropylethylenediamine, tetraethylpentaamine, and polyethylenimine. 
     
     
         15 . The percolation-inhibition composition of  claim 12 , wherein the complexing agent has a boiling point of at least 100° C. 
     
     
         16 . The percolation-inhibition composition of  claim 12 , wherein the solvent is water, and the polymer binder is a water-soluble polymer binder. 
     
     
         17 . The percolation-inhibition composition of  claim 12 , wherein the percolation-inhibition composition is devoid of an oxidizing agent for the metal. 
     
     
         18 . A percolation-inhibition composition for application to conductive structures formed of a metal, comprising:
 a complexing agent for the metal;   a reducing agent for the metal;   a polymer binder; and   a solvent.   
     
     
         19 . The percolation-inhibition composition of  claim 18 , wherein the complexing agent is selected from halides, sulfides, thiocyanates, and polysulfides. 
     
     
         20 . The percolation-inhibition composition of  claim 18 , wherein the reducing agent is selected from sodium borohydride, citrates, amines, polyamines, and alcohols. 
     
     
         21 . The percolation-inhibition composition of  claim 18 , wherein the solvent is water, and the polymer binder is a water-soluble polymer binder. 
     
     
         22 . The percolation-inhibition composition of  claim 18 , further comprising at least one of a surfactant, a humectant, and a solid filler. 
     
     
         23 . A patterned transparent conductor comprising:
 a substrate;   first conductive structures disposed within a first area of the substrate corresponding to a lower conductance portion; and   second conductive structures disposed within a second area of the substrate corresponding to a higher conductance portion,   wherein a sheet resistance of the lower conductance portion is at least 100 times a sheet resistance of the higher conductance portion, and   wherein a surface area coverage of the first conductive structures in the lower conductance portion is less than and is at least 20% of a surface area coverage of the second conductive structures in the higher conductance portion.   
     
     
         24 . The patterned transparent conductor of  claim 23 , wherein the surface area coverage of the first conductive structures in the lower conductance portion is at least 30% of the surface area coverage of the second conductive structures in the higher conductance portion. 
     
     
         25 . The patterned transparent conductor of  claim 23 , wherein the first conductive structures include first metallic nanowires, the second conductive structures include second metallic nanowires, and an average length of the first metallic nanowires is less than an average length of the second metallic nanowires. 
     
     
         26 . The patterned transparent conductor of  claim 25 , wherein the average length of the first metallic nanowires is at least 1/100 of the average length of the second metallic nanowires. 
     
     
         27 . The patterned transparent conductor of  claim 23 , wherein a percentage by number of nanoparticles among the first conductive structures in the lower conductance portion is greater than a percentage by number of nanoparticles among the second conductive structures in the higher conductance portion. 
     
     
         28 . The patterned transparent conductor of  claim 23 , wherein a difference in haze values of the higher conductance portion and the lower conductance portion is no greater than 0.4%, with respect to a wavelength of 550 nm.