Semiconductor device

Abstract

There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.

What is claimed is: 
     
         1 . A semiconductor device including a first transistor and a second transistor, comprising:
 a first wiring formed over a semiconductor substrate;   a first gate electrode of the first transistor formed over the first wiring;   a first gate insulating film of the first transistor formed over a side surface of the first gate electrode;   a first semiconductor layer of the first transistor formed over a side surface of the first gate electrode through the first gate insulating film and electrically connected to the first wiring;   a second wiring formed over the first semiconductor layer and electrically connected to the first semiconductor layer;   a third wiring formed over the first gate electrode, electrically connected to the first gate electrode and formed at the same wiring layer as the second wiring;   a second gate electrode of the second transistor formed over the third wiring and electrically connected to the third wiring;   a second gate insulating film of the second transistor formed over a side surface of the second gate electrode;   a second semiconductor layer of the second transistor formed over a side surface of the second gate electrode through the second gate insulating film and electrically connected to the second wiring; and   a fourth wiring formed over the second semiconductor layer and electrically connected to the second semiconductor layer.   
     
     
         2 . A semiconductor device according to the  claim 1 ,
 wherein the first transistor is a p-type transistor, and   wherein the second transistor is an n-type transistor.   
     
     
         3 . A semiconductor device according to the  claim 2 ,
 wherein the first and second transistors constitute an inverter.   
     
     
         4 . A semiconductor device according to the  claim 1 ,
 wherein each of the first, second, third and fourth wirings includes a Cu film.   
     
     
         5 . A semiconductor device according to the  claim 1 ,
 wherein each of the first and second semiconductor layers is formed of an oxide semiconductor.   
     
     
         6 . A semiconductor device according to the  claim 5 ,
 wherein the oxide semiconductor is InGaZnO, InZnO, ZnO, ZnAlO, ZnCuO, NiO, SnO, SnO 2 , CuO, Cu 2 O, Ta 2 O 5 , or TiO 2 , or those obtained by adding impurities such as nitrogen thereto.