Planar metrology pad adjacent a set of fins in a fin field effect transistor device

Abstract

Approaches for providing a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. A previously deposited amorphous carbon layer can be removed from over a mandrel that has been previously formed on a subset of a substrate, such as using a photoresist. A pad hardmask can be formed over the mandrel on the subset of the substrate. This formation results in the subset of the substrate having the pad hardmask covering the mandrel thereon and the remainder of the substrate having the amorphous carbon layer covering the mandrel thereon. This amorphous carbon layer can be removed from over the mandrel on the remainder of the substrate, allowing a set of fins to be formed therein while the amorphous carbon layer keeps the set of fins from being formed in the portion of the substrate that it covers.

What is claimed is: 
     
         1 - 15 . (canceled) 
     
     
         16 . A fin field effect transistor (FinFET) device, comprising:
 a set of fins patterned in a substrate of the FinFET device; and   a planar metrology pad formed on the substrate adjacent to the set of fins in a metrology measurement area of the FinFET device, wherein the planar metrology pad is substantially flat and oriented substantially perpendicular to the set of fins.   
     
     
         17 . The FinFET device of  claim 16 , further comprising an oxide formed between each of the set of fins. 
     
     
         18 . The FinFET device of  claim 16 , wherein the set of fins comprises silicon. 
     
     
         19 . The FinFET device of  claim 16 , wherein the planar metrology pad is contiguous with the set of fins and has an identical substance as the set of fins. 
     
     
         20 . The FinFET device of  claim 16 , wherein the set of fins comprises a hardmask and a spacer material. 
     
     
         21 . The FinFET device of  claim 16 , wherein planar metrology pad comprises a first hardmask, a spacer material, and a pad hardmask. 
     
     
         22 . The FinFET device of  claim 16 , wherein a top surface of each of the set of fins is at substantially the same height as a top surface of the planar metrology pad. 
     
     
         23 . A fin field effect transistor (FinFET) device, comprising:
 a set of fins patterned in a substrate of the FinFET device;   a planar metrology pad formed on the substrate adjacent to the set of fins in a metrology measurement area of the FinFET device, wherein the planar metrology pad is substantially flat and oriented substantially perpendicular to the set of fins; and   an oxide formed between each of the set of fins.   
     
     
         24 . The FinFET device of  claim 23 , wherein the set of fins comprises silicon. 
     
     
         25 . The FinFET device of  claim 23 , wherein the planar metrology pad is contiguous with the set of fins and has an identical substance as the set of fins. 
     
     
         26 . The FinFET device of  claim 23 , wherein a top surface of each of the set of fins is at substantially the same height as a top surface of the planar metrology pad.