US2015348855A1PendingUtilityA1

Method of Manufacturing a Semiconductor Device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Mar 19, 2001Filed: May 27, 2015Published: Dec 3, 2015
Est. expiryMar 19, 2021(expired)· nominal 20-yr term from priority
H10P 74/207H10P 74/00H10D 86/481H10D 86/60G01R 31/2601H01L 22/14G01R 31/2607G01R 31/3025G09G 3/006
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Claims

Abstract

The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming. An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device comprising:
 providing a circuit and at least one secondary coil, the circuit comprising a plurality of semiconductor elements, wherein the at least one secondary coil is electrically connected to the circuit;   inducing a voltage in the at least one secondary coil by applying a magnetic field thereto whereby an electric current flows through at least a part of the circuit;   measuring an electric field occurring at least a part of the circuit in order to test operation of the circuit.   
     
     
         2 . A method according to  claim 1 , wherein the circuit comprises a thin film transistor. 
     
     
         3 . A method according to  claim 1 , wherein the electric field is measured by using Pockels cell. 
     
     
         4 . A method according to  claim 1  further comprising incorporating the semiconductor device into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing device, a laptop computer, a game machine, a portable information terminal, and an image reproducing device. 
     
     
         5 . A method according to  claim 1  further comprising electrically separating the circuit from the at least one secondary coil. 
     
     
         6 . A method of manufacturing a semiconductor device comprising:
 providing a circuit and at least one secondary coil, the circuit comprising a plurality of semiconductor elements, wherein the at least one secondary coil is electrically connected to the circuit;   inducing a voltage in the at least one secondary coil by applying a magnetic field thereto whereby an electric current flows through at least a part of the circuit;   measuring an electromagnetic wave occurring at least a part of the circuit in order to test operation of the circuit.   
     
     
         7 . A method according to  claim 6 , wherein the circuit comprises a thin film transistor. 
     
     
         8 . A method according to  claim 6 , wherein the electromagnetic wave is measured by using an antenna. 
     
     
         9 . A method according to  claim 6  further comprising incorporating the semiconductor device into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing device, a laptop computer, a game machine, a portable information terminal, and an image reproducing device. 
     
     
         10 . A method according to  claim 6  further comprising electrically separating the circuit from the at least one secondary coil. 
     
     
         11 . A method of manufacturing a semiconductor device comprising:
 providing a first circuit, a second circuit and at least one secondary coil, the first circuit comprising a plurality of semiconductor elements over a substrate, wherein the at least one secondary coil is electrically connected to the first circuit through the second circuit;   inducing a voltage in the at least one secondary coil by applying a magnetic field thereto whereby an electric current flows from the at least one secondary coil to the first circuit via the second circuit;   measuring an electric field occurring at least a part of the first circuit in order to test operation of the circuit.   
     
     
         12 . A method according to  claim 11 , wherein the first circuit comprises a thin film transistor. 
     
     
         13 . A method according to  claim 11 , wherein the electric field is measured by using Pockels cell. 
     
     
         14 . A method according to  claim 11  further comprising incorporating the semiconductor device into an electronic device selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing device, a laptop computer, a game machine, a portable information terminal, and an image reproducing device. 
     
     
         15 . A method of manufacturing a semiconductor device according to  claim 11 , wherein the second circuit comprises a rectifier circuit for forming a source power voltage. 
     
     
         16 . A method of manufacturing a semiconductor device according to  claim 11 , wherein the second circuit comprises a rectifier circuit which comprises a diode, a capacitor, and a resistor. 
     
     
         17 . A method of manufacturing a semiconductor device according to  claim 11 , wherein the second circuit comprises a waveform shaping circuit. 
     
     
         18 . A method of manufacturing a semiconductor device according to  claim 11 , wherein the second circuit comprises a waveform shaping circuit for forming a driving signal. 
     
     
         19 . A method of manufacturing a semiconductor device according to  claim 11 , wherein the second circuit comprises a waveform shaping circuit which comprises a capacitor and a resistor. 
     
     
         20 . A method of manufacturing a semiconductor device according to  claim 11 , wherein each of the plurality of semiconductor elements comprises a crystallized semiconductor layer for forming a channel forming region, the crystallized semiconductor layer comprising silicon.

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