III-V Group Compound Devices with Improved Efficiency and Droop Rate

Abstract

A photonic device includes: a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness.

What is claim is: 
     
         1 . A photonic device, comprising:
 a first-type III-V group layer;   a second-type III-V group layer formed on the first-type III-V group layer; and   a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer;   wherein:   the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer;   a material of each barrier layer comprises semiconductor compound devoid of Al element;   the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and   the barrier layers of the first group layers comprise uniform thickness.   
     
     
         2 . The photonic device of  claim 1 , wherein the barrier layers of the second group layers comprise uniform thickness. 
     
     
         3 . The photonic device of  claim 2 , wherein number of the barrier layers of the first group layers comprises two or more. 
     
     
         4 . The photonic device of  claim 3 , wherein a doping concentration level of one of the barrier layers is equal to or greater than 3×10 17  ions/cm 3 . 
     
     
         5 . The photonic device of  claim 1 , wherein one of the barrier layers of the first group layers comprises a thickness greater than 10 nm, and one of the barrier layers of the second group layers comprises a thickness less than 10 nm. 
     
     
         6 . The photonic device of  claim 1 , wherein the photonic device comprises light-emitting diode (LED). 
     
     
         7 . The photonic device of  claim 6 , wherein the multi-quantum well layer emits visible light or invisible light. 
     
     
         8 . The photonic device of  claim 7 , wherein the visible light comprises blue light and the invisible light comprises UV light. 
     
     
         9 . The photonic device of  claim 6 , further comprising a lamp in which the LED is located. 
     
     
         10 . The photonic device of  claim 1 , wherein the active layers comprise uniform thickness. 
     
     
         11 . The photonic device of  claim 1 , further comprising a substrate formed under the first-type III-V group layer. 
     
     
         12 . The photonic device of  claim 1 , wherein the active layers contain indium gallium nitride (InGaN); and the barriers layers contain gallium nitride (GaN). 
     
     
         13 . The photonic device of  claim 1 , wherein the first-type III-V group layer comprises n-type; and the second-type III-V group layer comprises p-type. 
     
     
         14 . The photonic device of  claim 13 , wherein the first-type III-V group layer comprises n-doped gallium nitride (n-GaN); and the second-type III-V group layer comprises p-doped gallium nitride (p-GaN). 
     
     
         15 . The photonic device of  claim 1 , further comprising an electron-blocking layer formed between the multi-quantum well layer and the second-type III-V group layer. 
     
     
         16 . The photonic device of  claim 1 , wherein a barrier layer closest to the first-type semiconductor layer is within the first group layers, and another barrier closest to the second-type semiconductor layer is within the second group layers. 
     
     
         17 . The photonic device of  claim 1 , further comprising a pre-strained layer formed between the first-type III-V group layer and the multi-quantum well layer. 
     
     
         18 . The photonic device of  claim 17 , wherein the pre-strained layer comprises a super-lattice structure containing In x Ga 1-x N and GaN layers. 
     
     
         19 . The photonic device of  claim 1 , wherein a thickness of each active layer is between 2 nm to 3.5 nm. 
     
     
         20 . The photonic device of  claim 1 , wherein one of the first group layers and the second group layers is doped with a dopant.