Pixelated silicon cells or integrated circuits

Abstract

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

What is claimed is: 
     
         1 . A method of releasing a device cell from a silicon handle wafer comprising:
 (a) providing a structure comprising a germanium layer between a silicon device cell and a silicon handle wafer or a polymer layer; and   (b) directing electromagnetic radiation at the structure, wherein the electromagnetic radiation has a wavelength selective for removing germanium relative to the silicon device cell and the silicon handle wafer or polymer layer.   
     
     
         2 . The method of  claim 1 , wherein the electromagnetic radiation has a wavelength in the range 1100-1600 nanometers. 
     
     
         3 . The method of  claim 2 , wherein the electromagnetic radiation is directed through the silicon handle wafer or polymer layer into a germanium layer near the device cell. 
     
     
         4 . The method of  claim 3 , wherein the germanium layer comprises crystalline, polycrystalline, or amorphous germanium. 
     
     
         5 . The method of  claim 3 , wherein the silicon handle wafer has a thickness in the range 500-800 micrometers. 
     
     
         6 . The method of  claim 4 , wherein the polymer layer has a thickness in the range 8-250 micrometers. 
     
     
         7 . The method of  claim 5 , wherein the germanium layer has a thickness in the range 0.1-0.5 micrometers.