Method for manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus

Abstract

A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

1 . A semiconductor light emitting apparatus comprising:
 a semiconductor light emitting device including:
 a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; 
 a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer; 
 a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer; 
 a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films; and 
 a conductive guide film provided on at least one of a first position on the first electrode not covered by the dielectric stacked film, a second position on the second electrode not covered by the dielectric stacked film, a third position on a first upper face of the dielectric stacked film on a peripheral portion of the first electrode, a fourth position on a second upper face of the dielectric stacked film on a peripheral portion of the second electrode, and a fifth position on a side faces of the dielectric stacked film.