Thin film hybrid junction field effect transistor

Abstract

Junction field effect transistors are provided which include a gate junction located on a surface of a crystalline semiconductor material of a first conductivity type. The gate junction can be selected from one of a doped hydrogenated crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, a doped hydrogenated non-crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, and a Schottky contact.

1 . A junction field effect transistor comprising:
 a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate; and   a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a doped hydrogenated crystalline semiconductor material layer portion of a second conductivity type, wherein said second conductivity type is opposite from the first conductivity type and wherein said doped hydrogenated crystalline semiconductor material layer portion has a hydrogen concentration from 5 atomic % to 40 atomic %.   
     
     
         2 . The junction field effect transistor of  claim 1 , further comprising an electrode material portion located directly on a surface of said doped hydrogenated semiconductor crystalline semiconductor material layer portion. 
     
     
         3 . The junction field effect transistor of  claim 1 , wherein the gate junction further comprises a doped hydrogenated non-crystalline semiconductor material layer portion of the second conductivity type located on a surface of said doped hydrogenated crystalline semiconductor material layer portion. 
     
     
         4 . The junction field effect transistor of  claim 3 , further comprising an electrode material portion located directly on a surface of said doped hydrogenated non-crystalline semiconductor material layer portion. 
     
     
         5 . The junction field effect transistor of  claim 1 , further comprising a first source/drain contact located on a first side of the gate junction and having a bottommost surface in contact with the surface of the crystalline semiconductor material, and a second source/drain contact located on second side of the gate junction that is opposite to said first side and having a bottommost surface in contact with the surface of the crystalline semiconductor material, wherein said first source/drain contact and said second source/drain contact are disjoined from said gate junction. 
     
     
         6 . The junction field effect transistor of  claim 5 , wherein said first source/drain contact and said second source/drain contact are comprised of ohmic metal contacts. 
     
     
         7 . The junction field effect transistor of  claim 5 , wherein said first source/drain contact and said second source/drain contact are comprised of a doped hydrogenated crystalline semiconductor material of the first conductivity type, wherein said doped hydrogenated crystalline semiconductor material has a hydrogen concentration from 5 atomic % to 40 atomic %. 
     
     
         8 . The junction field effect transistor of  claim 5 , wherein said first source/drain contact and said second source/drain contact are comprised of a doped hydrogenated non-crystalline semiconductor material of the first conductivity type. 
     
     
         9 . The junction field effect transistor of  claim 5 , further comprising passivation material layer portions located on each side of the gate junction, wherein one of said passivation material layer portions separates the first source/drain contact from said gate junction, and another of said passivation material layer portions separates the second source/drain contact from said gate junction. 
     
     
         10 .- 19 . (canceled) 
     
     
         20 . A junction field effect transistor comprising:
 a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate; and   a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a Schottky contact, and said Schottky contact is selected from one of a metal layer portion, a metal semiconductor alloy layer portion, and a doped metal semiconductor alloy portion of a second conductivity type, wherein said second conductivity type is opposite from said first conductivity type.   
     
     
         21 . The junction field effect transistor of  claim 20 , further comprising an electrode material portion located atop said Schottky contact. 
     
     
         22 . The junction field effect transistor of  claim 20 , further comprising a first source/drain contact located on a first side of the gate junction and having a bottommost surface in contact with the surface of the crystalline semiconductor material, and a second source/drain contact located on second side of the gate junction that is opposite to said first side and having a bottommost surface in contact with the surface of the crystalline semiconductor material, wherein said first source/drain contact and said second source/drain contact are disjoined from said gate junction. 
     
     
         23 . The junction field effect transistor of  claim 22 , wherein said first source/drain contact and said second source/drain contact are comprised of ohmic metal contacts. 
     
     
         24 . The junction field effect transistor of  claim 22 , wherein said first source/drain contact and said second source/drain contact are comprised of a doped hydrogenated crystalline semiconductor material of the first conductivity type, wherein said doped hydrogenated crystalline semiconductor material layer portion has a hydrogen concentration from 5 atomic % to 40 atomic %. 
     
     
         25 . The junction field effect transistor of  claim 22 , wherein said first source/drain contact and said second source/drain contact are comprised of a doped hydrogenated non-crystalline semiconductor material of the first conductivity type. 
     
     
         26 . The junction field effect transistor of  claim 22 , further comprising passivation material layer portions located on each side of the gate junction, wherein one of said passivation material layer portions separates the first source/drain contact from said gate junction, and another of said passivation material layer portions separates the second source/drain contact from said gate junction.