US2015332987A1PendingUtilityA1

Microelectronic Assembly including Built-In Thermoelectric Cooler and Method of Fabricating Same

Assignee: INTEL CORPPriority: Dec 27, 2004Filed: Dec 30, 2013Published: Nov 19, 2015
Est. expiryDec 27, 2024(expired)· nominal 20-yr term from priority
H10W 90/00H10W 40/47H10W 40/22H10W 40/28H01L 23/3675H01L 23/473H01L 35/32H01L 25/16H01L 35/02H01L 23/38H10N 15/00H10N 10/17H10N 10/01H10N 10/80H10N 10/13
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Claims

Abstract

A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A microelectronic assembly comprising:
 a microelectronic device; and   a thermoelectric cooler (TEC) coupled to the microelectronic device, wherein the TEC has a thickness range from 50 to 200 microns.   
     
     
         2 . The microelectronic assembly of  claim 1 , where the TEC is coupled to the microelectronic device such that there is no mounting material between the TEC and the microelectronic device. 
     
     
         3 . The microelectronic assembly of  claim 1 , wherein the TEC comprises at least one couple including an N-type electrode, a P-type electrode, a plurality of conductive elements electrically coupling the N-type electrode and P-type electrode of the couple to one another, and a patterned electrical insulator layer between respective ones of the conductive elements, respective ones of the N-type electrodes and respective ones of the P-type electrodes. 
     
     
         4 . The microelectronic assembly of  claim 1 , wherein the microelectronic device includes an oxide layer on a side thereof adapted to be coupled to the TEC. 
     
     
         5 . The microelectronic assembly of  claim 1  further including a heat sink coupled to the TEC. 
     
     
         6 . The microelectronic assembly of  claim 1  further including a liquid-cooled cold plate coupled to the TEC. 
     
     
         7 . The microelectronic assembly of  claim 1  wherein the TEC includes a plurality of thermoelectric couples, wherein the plurality of thermoelectric couples is connected electrically in series and the TEC is coupled to the microelectronic device in parallel. 
     
     
         8 . A system comprising:
 a microelectronic assembly including:
 a microelectronic device; and 
 a TEC coupled to the microelectronic device such that there is no mounting material between the TEC and the microelectronic device; and 
   a graphics processor coupled to the microelectronic assembly.   
     
     
         9 . The system of  claim 8 , wherein the TEC comprises at least one couple including an N-type electrode, a P-type electrode, a plurality of conductive elements electrically coupling the N-type electrode and P-type electrode of the couple to one another, and a patterned electrical insulator layer between respective ones of the conductive elements, respective ones of the N-type electrodes and respective ones of the P-type electrodes. 
     
     
         10 . A microelectronic arrangement comprising:
 a microelectronic assembly including:
 a microelectronic device; and 
 a TEC coupled to the microelectronic device, wherein the TEC has a thickness range from 50 to 200 microns; and 
   an electrical circuit electrically connected to the TEC and including a power source adapted to supply current to the TEC.   
     
     
         11 . The arrangement of  claim 10 , wherein the TEC comprises at least one couple including an N-type electrode, a P-type electrode, a plurality of conductive elements electrically coupling the N-type electrode and P-type electrode of the couple to one another, and a patterned electrical insulator layer between respective ones of the conductive elements, respective ones of the N-type electrodes and respective ones of the P-type electrodes. 
     
     
         12 . The arrangement of  claim 10 , further comprising a feedback control loop coupled to the microelectronic device, to the TEC and to the electrical circuit to control an extent of cooling provided by the TEC as a function of a temperature of the microelectronic device. 
     
     
         13 . A microelectronic assembly comprising:
 a microelectronic device; and   a thermoelectric cooler (TEC) coupled to the microelectronic device, wherein the TEC includes a plurality of thermoelectric couples, wherein the plurality of thermoelectric couples is connected electrically in series, and wherein the TEC is thermally coupled to the microelectronic device in parallel.   
     
     
         14 . The microelectronic assembly of  claim 13 , where the TEC is coupled to the microelectronic device such that there is no mounting material between the TEC and the microelectronic device. 
     
     
         15 . The microelectronic assembly of  claim 13 , wherein the TEC has a thickness range from 50 to 200 microns. 
     
     
         16 . The microelectronic assembly of  claim 13 , wherein the TEC comprises at least one couple including an N-type electrode, a P-type electrode, a plurality of conductive elements electrically coupling the N-type electrode and P-type electrode of the couple to one another, and a patterned electrical insulator layer between respective ones of the conductive elements, respective ones of the N-type electrodes and respective ones of the P-type electrodes. 
     
     
         17 . The microelectronic assembly of  claim 13 , wherein the microelectronic device includes an oxide layer on a side thereof adapted to be coupled to the TEC, and wherein the oxide layer abuts a plurality of metallization conductive elements of the TEC to define a cold junction region of the TEC. 
     
     
         18 . The microelectronic assembly of  claim 13  further including a heat sink coupled to the TEC. 
     
     
         19 . The microelectronic assembly of  claim 13  further including a liquid-cooled cold plate coupled to the TEC.

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