Semiconductor light emitting element and semiconductor light emitting device

Abstract

A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.

1 .- 20 . (canceled) 
     
     
         21 . A semiconductor light emitting element, comprising:
 a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer;   an n-side electrode provided on a first region of the n-type semiconductor layer and in contact with the first region, the n-side electrode being not provided on a second region of the n-type semiconductor layer;   a p-side electrode provided on a third region of the p-type semiconductor layer and in contact with the third region, the p-side electrode being not provided on a fourth region of the p-type semiconductor layer;   an insulating layer provided in contact with the n-type semiconductor layer and having a first reflectance to light, the first reflectance being higher than a second reflectance of the n-side electrode to the light; and   a first upper metal layer provided on at least a part of the n-side electrode and electrically connected with the n-side electrode; and   a second upper metal layer provided on at least a part of the p-side electrode and electrically connected with the p-side electrode,   the insulating layer including
 a first insulating portion provided between the first upper metal layer and the second region, and 
 a second insulating portion provided between the second upper metal layer and the fourth region. 
   
     
     
         22 . The element according to  claim 21 , wherein:
 an area of the first region is smaller than an area of the first insulating portion.   
     
     
         23 . The element according to  claim 21 , further comprising an intermediate metal layer provided between the p-side electrode and the second upper metal layer. 
     
     
         24 . The element according to  claim 23 , wherein the intermediate metal layer includes a Pt layer and a W layer laminated with the Pt layer. 
     
     
         25 . The element according to  claim 21 , wherein the first upper metal layer includes a Ti layer, a Pt layer laminated with the Ti layer, and a Au layer laminated with the Pt layer. 
     
     
         26 . The element according to  claim 21 , wherein:
 a peak wavelength of the light is not less than 370 nanometers and not more than 400 nanometers.   
     
     
         27 . The element according to  claim 21 , wherein:
 the laminated structure body further includes a substrate made of sapphire and provided on a side of a second main surface opposite to the first main surface.   
     
     
         28 . The element according to  claim 21 , wherein:
 the laminated structure body is formed on the substrate via a single-crystal aluminum nitride layer.   
     
     
         29 . The element according to  claim 28 , wherein:
 the aluminum nitride layer has a first portion and a second portion, the first portion is provided between the substrate and a second portion, the first portion has a carbon concentration relatively higher than a carbon concentration in the second portion.   
     
     
         30 . The element according to  claim 21 , wherein:
 the n-side electrode includes a conductive film being transmissive to the light.   
     
     
         31 . The element according to  claim 30 , wherein:
 the conductive film has ohmic property to the n-type semiconductor layer.   
     
     
         32 . The element according to  claim 21 , wherein:
 the first upper metal layer includes a layer provided on a side of the laminated structure body and including at least one of aluminum, an aluminum alloy, rhodium, and a rhodium alloy.   
     
     
         33 . The element according to  claim 21 , wherein:
 the n-side electrode has ohmic property to the n-type semiconductor layer.   
     
     
         34 . The element according to  claim 21 , wherein:
 the n-side electrode includes at least one of silver and a silver alloy.   
     
     
         35 . The element according to  claim 21 , wherein:
 the p-side electrode includes at least one of silver and a silver alloy.   
     
     
         36 . The element according to  claim 21 , wherein:
 the p-side electrode includes a silver contained film in contact with the p-type semiconductor layer and a platinum contained film stacked with the silver contained film.   
     
     
         37 . The element according to  claim 21 , wherein:
 the first upper metal layer is connected to a connection member.   
     
     
         38 . The element according to  claim 21 , wherein:
 the insulating layer includes a plurality of dielectric films alternatively laminated and having a different refractive index from each other.   
     
     
         39 . The element according to  claim 21 , wherein:
 the insulating layer includes at least one of oxide, nitride, or acid nitride of at least one of silicon (Si), aluminum (Al), zirconium (Zr), titanium (Ti), niobium (Nb), tantalum (Ta), magnesium (Ma), hafnium (Hf), cerium (Ce), and zinc (Zn).   
     
     
         40 . The element according to  claim 21 , wherein: 
       the insulating layer includes a silicon oxide contained film and a titanium oxide contained film. 
     
     
         41 . The element according to  claim 21 , wherein: 
       the insulating layer contacts the n-side electrode. 
     
     
         42 . The element according to  claim 21 , wherein:
 the insulating layer is apart from the n-side electrode, and   a part of the first upper metal layer is in direct contact with the n-type semiconductor layer at which the insulating layer is apart from the n-side electrode.   
     
     
         43 . The element according to  claim 21 , wherein:
 the first upper metal layer includes a first layer and a second layer, the first layer is disposed between the second layer and the n-type semiconductor layer.   
     
     
         44 . The element according to  claim 43 , wherein:
 a reflectance of the first layer to the light is higher than a reflectance of the second layer to the light.   
     
     
         45 . The element according to  claim 43 , wherein:
 the first layer includes at least one of Ag and Al, and the second layer includes Au.   
     
     
         46 . The element according to  claim 21 , wherein:
 the p-side electrode has a third reflectance with respect to the light, and   the third reflectance is higher than the second reflectance.