Light emitting device

Abstract

A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

What is claimed is: 
     
         1 . A light emitting device, comprising:
 a light emitting unit, comprising
 a substrate; 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer; 
   a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer and the light transmissive layer at least exposes the first electrode and the second electrode; and   an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer, and respectively cover at least a part of an upper surface of the encapsulant.   
     
     
         2 . The light emitting device as claimed in  claim 1 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant. 
     
     
         3 . The light emitting device as claimed in  claim 2 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant. 
     
     
         4 . The light emitting device as claimed in  claim 1 , further comprising:
 one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.   
     
     
         5 . The light emitting device as claimed in  claim 2 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant. 
     
     
         6 . The light emitting device as claimed in  claim 2 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion. 
     
     
         7 . The light emitting device as claimed in  claim 2 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other. 
     
     
         8 . The light emitting device as claimed in  claim 7 , wherein the first sub-electrodes of the first electrode extending portion are located in at least one corner away from the second electrode on the upper surface of the encapsulant, and the second sub-electrodes of the second electrode extending portion are located in at least one corner away from the first electrode on the upper surface of the encapsulant. 
     
     
         9 . The light emitting device as claimed in  claim 2 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant. 
     
     
         10 . The light emitting device as claimed in  claim 9 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof. 
     
     
         11 . The light emitting device as claimed in  claim 2 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant. 
     
     
         12 . The light emitting device as claimed in  claim 11 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof. 
     
     
         13 . The light emitting device as claimed in  claim 1 , further comprising:
 a reflection layer, disposed on the upper surface of the encapsulant.   
     
     
         14 . The light emitting device as claimed in  claim 13 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant. 
     
     
         15 . The light emitting device as claimed in  claim 13 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         16 . The light emitting device as claimed in  claim 1 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         17 . The light emitting device as claimed in  claim 16 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         18 . The light emitting device as claimed in  claim 16 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant. 
     
     
         19 . A light emitting device, comprising:
 a light emitting unit, comprising:
 a substrate, 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer opposite to the substrate; 
   a light transmissive layer, disposed on the light emitting unit and located at one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode; and   an encapsulant, located between the light emitting unit and the light transmissive layer, and encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer, and respectively cover at least a part of an upper surface of the encapsulant.   
     
     
         20 . The light emitting device as claimed in  claim 19 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant. 
     
     
         21 . The light emitting device as claimed in  claim 20 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant. 
     
     
         22 . The light emitting device as claimed in  claim 19 , further comprising:
 one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.   
     
     
         23 . The light emitting device as claimed in  claim 20 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant. 
     
     
         24 . The light emitting device as claimed in  claim 20 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion. 
     
     
         25 . The light emitting device as claimed in  claim 20 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other. 
     
     
         26 . The light emitting device as claimed in  claim 20 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant. 
     
     
         27 . The light emitting device as claimed in  claim 26 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof. 
     
     
         28 . The light emitting device as claimed in  claim 20 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant. 
     
     
         29 . The light emitting device as claimed in  claim 28 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof. 
     
     
         30 . The light emitting device as claimed in  claim 19 , further comprising:
 a reflection layer, disposed on the upper surface of the encapsulant.   
     
     
         31 . The light emitting device as claimed in  claim 30 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant. 
     
     
         32 . The light emitting device as claimed in  claim 30 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         33 . The light emitting device as claimed in  claim 19 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         34 . The light emitting device as claimed in  claim 33 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         35 . The light emitting device as claimed in  claim 33 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant. 
     
     
         36 . A light emitting device, comprising:
 a light emitting unit, comprising:
 a substrate, 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer; 
   an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant.   
     
     
         37 . The light emitting device as claimed in  claim 36 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant. 
     
     
         38 . The light emitting device as claimed in  claim 37 , wherein the first electrode extending portion comprises a plurality of first sub-electrodes separated from each other, and the second electrode extending portion comprises a plurality of second sub-electrodes separated from each other. 
     
     
         39 . The light emitting device as claimed in  claim 36 , wherein the encapsulant has one or a plurality of flat surfaces. 
     
     
         40 . The light emitting device as claimed in  claim 36 , further comprising:
 a reflection layer, at least disposed on a part of the upper surface of the encapsulant.   
     
     
         41 . The light emitting device as claimed in  claim 40 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         42 . The light emitting device as claimed in  claim 36 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         43 . The light emitting device as claimed in  claim 42 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         44 . The light emitting device as claimed in  claim 42 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant. 
     
     
         45 . A light emitting device, comprising:
 a light emitting unit, comprising:
 a substrate, 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer; and 
   an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the epitaxial structure layer and respectively cover at least a part of an upper surface of the encapsulant.   
     
     
         46 . The light emitting device as claimed in  claim 45 , wherein the first electrode comprises a first electrode portion connected to the epitaxial structure layer and a first electrode extending portion connected to the first electrode portion, and the second electrode comprises a second electrode portion connected to the epitaxial structure layer and a second electrode extending portion connected to the second electrode portion, and the first electrode extending portion and the second electrode extending portion respectively extend outward to at least a part of the upper surface of the encapsulant. 
     
     
         47 . The light emitting device as claimed in  claim 46 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant. 
     
     
         48 . The light emitting device as claimed in  claim 45 , wherein the encapsulant has one or a plurality of flat surfaces. 
     
     
         49 . The light emitting device as claimed in  claim 46 , wherein the first electrode extending portion comprises a plurality of first grating type electrodes, and the second electrode extending portion comprises a plurality of second grating type electrodes, the first grating type electrodes are distributed on the first electrode portion and a part of the upper surface of the encapsulant, and the second grating type electrodes are distributed on the second electrode portion and a part of the upper surface of the encapsulant. 
     
     
         50 . The light emitting device as claimed in  claim 46 , wherein at least a part of the first electrode extending portion extends from an edge of the first electrode portion towards a direction away from the second electrode portion, and at least a part of the second electrode extending portion extends from an edge of the second electrode portion towards a direction away from the first electrode portion. 
     
     
         51 . The light emitting device as claimed in  claim 46 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other. 
     
     
         52 . The light emitting device as claimed in  claim 46 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise an adhesion layer and a barrier layer disposed between the adhesion layer and the encapsulant. 
     
     
         53 . The light emitting device as claimed in  claim 52 , wherein a material of the adhesion layer comprises gold, tin, aluminium, silver, copper, indium, bismuth, platinum, gold-tin alloy, tin-silver alloy, tin-silver-copper alloy (Sn—Ag—Cu (SAC) alloy) or a combination thereof, and a material of the barrier layer includes nickel, titanium, tungsten, gold or an alloy of a combination thereof. 
     
     
         54 . The light emitting device as claimed in  claim 46 , wherein the first electrode and the second electrode respectively comprise a reflection layer respectively disposed between the electrode extending portions and the encapsulant. 
     
     
         55 . The light emitting device as claimed in  claim 54 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, or an alloy of a combination thereof. 
     
     
         56 . The light emitting device as claimed in  claim 45 , further comprising:
 a reflection layer, disposed on the upper surface of the encapsulant.   
     
     
         57 . The light emitting device as claimed in  claim 56 , wherein at least a part of the reflection layer is located between the electrodes and the encapsulant. 
     
     
         58 . The light emitting device as claimed in  claim 56 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         59 . The light emitting device as claimed in  claim 45 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         60 . The light emitting device as claimed in  claim 59 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         61 . The light emitting device as claimed in  claim 59 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant. 
     
     
         62 . A light emitting device, comprising:
 a light emitting unit, comprising:
 a substrate; 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer; 
   a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer and at least exposes the first electrode and the second electrode; and
 an encapsulant, encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant. 
   
     
     
         63 . The light emitting device as claimed in  claim 62 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant. 
     
     
         64 . The light emitting device as claimed in  claim 63 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant. 
     
     
         65 . The light emitting device as claimed in  claim 62 , further comprising:
 one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.   
     
     
         66 . The light emitting device as claimed in  claim 63 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other. 
     
     
         67 . The light emitting device as claimed in  claim 66 , wherein the first sub-electrodes and the second sub-electrodes are laminar electrodes, spherical electrodes, or grating type electrodes. 
     
     
         68 . The light emitting device as claimed in  claim 62 , further comprising:
 a reflection layer, at least disposed on a part of the upper surface of the encapsulant.   
     
     
         69 . The light emitting device as claimed in  claim 68 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         70 . The light emitting device as claimed in  claim 62 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         71 . The light emitting device as claimed in  claim 70 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         72 . The light emitting device as claimed in  claim 70 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant. 
     
     
         73 . A light emitting device, comprising:
 a light emitting unit, comprising:
 a substrate; 
 an epitaxial structure layer, disposed on the substrate; and 
 a first electrode and a second electrode, respectively disposed on a same side of the epitaxial structure layer opposite to the substrate; 
   a light transmissive layer, disposed on the light emitting unit and located at one side of the substrate opposite to the epitaxial structure layer, the first electrode and the second electrode; and   an encapsulant, located between the light emitting unit and the light transmissive layer, and encapsulating the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend upward from the epitaxial structure layer without covering an upper surface of the encapsulant.   
     
     
         74 . The light emitting device as claimed in  claim 73 , wherein the first electrode comprises a first electrode portion and a first electrode extending portion, and the second electrode comprises a second electrode portion and a second electrode extending portion, wherein the first electrode extending portion and the second electrode extending portion respectively protrude out from the upper surface of the encapsulant. 
     
     
         75 . The light emitting device as claimed in  claim 74 , wherein the first electrode extending portion and the second electrode extending portion are aligned with or contracted inward relative to an edge of the upper surface of the encapsulant. 
     
     
         76 . The light emitting device as claimed in  claim 73 , further comprising:
 one or a plurality of flat surfaces, each comprising the light transmissive layer and the encapsulant.   
     
     
         77 . The light emitting device as claimed in  claim 74 , wherein the first electrode extending portion and the second electrode extending portion respectively comprise a plurality of sub-electrodes separated from each other. 
     
     
         78 . The light emitting device as claimed in  claim 77 , wherein the first sub-electrodes and the second sub-electrodes are laminar electrodes, spherical electrodes, or grating type electrodes. 
     
     
         79 . The light emitting device as claimed in  claim 73 , further comprising:
 a reflection layer, at least disposed on a part of the upper surface of the encapsulant.   
     
     
         80 . The light emitting device as claimed in  claim 79 , wherein a material of the reflection layer comprises gold, aluminium, silver, nickel, titanium, distributed Bragg reflector (DBR), a resin layer doped with reflection particles with high reflectivity or a combination thereof. 
     
     
         81 . The light emitting device as claimed in  claim 73 , further comprising:
 a wavelength conversion material, wrapping the light emitting unit and at least exposing a part of the first electrode and a part of the second electrode.   
     
     
         82 . The light emitting device as claimed in  claim 81 , wherein the wavelength conversion material comprises a fluorescent material or a quantum dot material. 
     
     
         83 . The light emitting device as claimed in  claim 81 , wherein the wavelength conversion material is formed on a surface of the light emitting unit, formed on a surface of the encapsulant or mixed in the encapsulant.