Method of manufacturing solid-state imaging device and solid-state imaging device

Abstract

According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.

1 . (canceled) 
     
     
         2 . A solid-state imaging device, comprising:
 photoelectric conversion elements including an imaging photoelectric conversion element used for imaging of an image and an adjustment photoelectric conversion element used for image quality adjustment of an imaged image; and   light shielding members that are provided at a first position to isolate the plurality of photoelectric conversion elements and at a second position to shield at least part of subject light incident to the adjustment photoelectric conversion element.   
     
     
         3 . The solid-state imaging device according to  claim 2 ,
 wherein the light shielding member provided at the second position is formed such that a bottom surface is positioned at a subject light incident side rather than a light receiving surface in the adjustment photoelectric conversion element.   
     
     
         4 . The solid-state imaging device according to  claim 2 ,
 wherein the light shielding member provided at the first position and the light shielding member provided at the second position have a same depth in the solid-state imaging device.   
     
     
         5 . The solid-state imaging device according to  claim 2 , 
       wherein
 the adjustment photoelectric conversion element includes a photoelectric conversion element used for focus adjustment by a phase difference detection scheme, and 
 the light shielding member provided at the second position is formed such that an aperture plane is one-sided in a predetermined direction with respect to the light receiving surface of the adjustment photoelectric conversion element. 
 
     
     
         6 . The solid-state imaging device according to  claim 5 ,
 wherein the light shielding member provided at the second position is formed at a position to shield diagonal half of the light receiving surface of the adjustment photoelectric conversion element.   
     
     
         7 . The solid-state imaging device according to  claim 2 ,
 wherein the light shielding members are made of any one of aluminum (Al), tungsten (W), and copper (Cu).   
     
     
         8 . The solid-state imaging device according to  claim 2 ,
 wherein the light shielding member provided at the second position is formed such that a bottom surface reaches a light receiving surface of the adjustment photoelectric conversion element.   
     
     
         9 . The solid-state imaging device according to  claim 2 ,
 wherein the light shielding member provided at the second position is formed at a position to shield a whole light receiving surface of the adjustment photoelectric conversion element used for an optical black.   
     
     
         10 . The solid-state imaging device according to  claim 2 ,
 wherein the solid-state imaging device includes a back-illuminated image sensor.   
     
     
         11 . The solid-state imaging device according to  claim 2 , further comprising insulating films that coat circumferential surfaces excepting surfaces of the light shielding members, the surfaces of the light shielding members facing a light receiving surface of the solid-state imaging device. 
     
     
         12 . The solid-state imaging device according to  claim 11 ,
 wherein the insulating films are formed using an atomic layer deposition (ALD) technique.