US2015325540A1PendingUtilityA1

Plug via formation by patterned plating and polishing

Assignee: IBMPriority: Sep 13, 2013Filed: Jul 1, 2015Published: Nov 12, 2015
Est. expirySep 13, 2033(~7.1 yrs left)· nominal 20-yr term from priority
H10W 90/724H10W 72/9415H10W 72/07236H10W 72/01955H10W 72/01951H10W 72/01938H10W 72/01935H10W 72/01257H10W 72/01255H10W 72/01235H10W 72/01225H10W 72/952H10W 72/923H10W 72/252H10W 72/244H10W 72/241H10W 72/072H10W 72/29H10W 72/019H10W 72/012H10W 42/121H10W 74/137H10W 20/20H10W 72/20H01L 2224/13025H01L 24/13H01L 23/481H01L 23/3171
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Claims

Abstract

Solder bump connections and methods for fabricating solder bump connections. A passivation layer is formed on a dielectric layer. A via opening extends through the passivation layer from a top surface of the passivation layer to a metal line in the dielectric layer. A mask on the top surface of the passivation layer includes a mask opening that is aligned with the via opening. A conductive layer is selectively formed in the via opening and the mask opening. The conductive layer projects above the top surface of the passivation layer. The method further includes planarizing the passivation layer and the conductive layer to define a plug in the via opening that is coupled with the metal line.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A solder bump connection comprising:
 a passivation layer;   a via opening extending through the passivation layer; and   a plug in the via opening,   wherein the plug is comprised of a conductor, the passivation layer includes a top surface that is coplanar with the plug, and the top surface of the passivation layer is free of surface damage.   
     
     
         2 . The solder bump connection of  claim 1  further comprising:
 a seed layer in the via opening, the seed layer comprised of a material that promotes deposition of the conductor. 
 
     
     
         3 . The solder bump connection of  claim 2  further comprising:
 a crackstop opening in the passivation layer; and 
 an adhesion layer disposed in the crackstop opening and disposed between the seed layer and the passivation layer in the via opening, 
 wherein the crackstop opening is free of the seed layer. 
 
     
     
         4 . The solder bump connection of  claim 1  further comprising:
 a solder bump; 
 a dielectric layer; and 
 a metal line in the dielectric layer, 
 wherein the solder bump is coupled with the metal line by the plug.

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