Optoelectronic device and method for manufacturing the same

Abstract

An optoelectronic device includes a substrate; a first semiconductor layer having a first conductivity-type impurity formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer having a second conductivity-type impurity formed on the active layer; and a hollow component formed inside the active layer or the second semiconductor layer, wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.

What is claimed is: 
     
         1 . An optoelectronic device comprising:
 a substrate;   a first semiconductor layer having a first conductivity-type impurity formed on the substrate,   an active layer formed on the first semiconductor layer;   a second semiconductor layer having a second conductivity-type impurity formed on the active layer; and   a hollow component formed inside the active layer or the second semiconductor layer;   wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.   
     
     
         2 . The optoelectronic device of  claim 1 , wherein the layer with the hollow component is doped with an additional impurity, and the additional impurity is the first conductivity-type impurity. 
     
     
         3 . The optoelectronic device of  claim 1 , further comprising a plurality of hollow components formed inside the active layer or the second semiconductor layer, wherein the width of one of the plurality of hollow components is between 10 nm and 2000 nm and/or the porosity of the plurality of hollow components is between 5% and 90%. 
     
     
         4 . The optoelectronic device of  claim 1 , wherein the active layer or the second semiconductor layer comprises at least one element selected from the group consisting of Al, Ga, and In. 
     
     
         5 . The optoelectronic device of  claim 2 , wherein the second conductivity-type impurity comprise an element selected from group IIA and the additional impurity and the first conductivity-type impurity comprises an element selected from groups IVA and VIA. 
     
     
         6 . The optoelectronic device of  claim 2 , wherein the doping concentration of the additional impurity is between 5E15 and 1E19 cm −3 . 
     
     
         7 . The optoelectronic device of  claim 1 , wherein the upper surface of the second semiconductor layer has a plurality of depressions and a portion of the hollow component are exposed at sidewalls of the plurality of depressions. 
     
     
         8 . The optoelectronic device of  claim 3 , wherein the plurality of hollow components is distributed at about a same level of height. 
     
     
         9 . The optoelectronic device of  claim 1 , further comprising a submount, wherein the hollow component is between the submount and the substrate for reflecting a light emitted from the active layer toward the substrate. 
     
     
         10 . A method of fabricating an optoelectronic device, comprising:
 providing a substrate;   forming a first semiconductor layer having a first conductivity-type impurity on the substrate;   forming an active layer on the first semiconductor layer;   forming a second semiconductor layer having a second conductivity-type impurity; and   forming a hollow component inside the second semiconductor layer and/or the active layer;   wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.   
     
     
         11 . The method of fabricating an optoelectronic device of  claim 10 , further comprising:
 doping an additional impurity into the second semiconductor layer and/or the active layer.   
     
     
         12 . The method of fabricating the optoelectronic device of  claim 11 , wherein the method for forming the hollow component comprises electrochemical etching the second semiconductor layer and/or the active layer. 
     
     
         13 . The method of fabricating the optoelectronic device of  claim 12 , wherein the electrochemical etching is performed with an aqueous solution comprising one solution selected from H 2 SO 4 , H 3 PO 4 , H 2 C 2 O 4 , HCl, KOH, NaOH, ethylene glycol solution, and their mixture. 
     
     
         14 . The method of fabricating an optoelectronic device of  claim 11 , wherein the second conductivity-type impurity comprise an element selected from group IIA, the additional impurity and the first conductivity-type impurity comprises an element selected from groups IVA and VIA, or the active layer or the second semiconductor layer comprises an element selected from the group consisting of Al, Ga, and In. 
     
     
         15 . The method of fabricating an optoelectronic device of  claim 13 , wherein the additional impurity is chemically more reactive to the aqueous solution of the electrochemical etching than the second conductivity-type impurity. 
     
     
         16 . The method of fabricating the optoelectronic device of  claim 15 , wherein the electrochemical etching consumes a portion of the additional impurity such that the concentration of the additional impurity is decreased after the electrochemical etching. 
     
     
         17 . The method of fabricating the optoelectronic device of  claim 13 , wherein the additional impurity is doped at a depth from an upper surface of the second semiconductor layer, and the hollow component is formed about the same as the depth from the upper surface of the second semiconductor layer. 
     
     
         18 . The method of fabricating the optoelectronic device of  claim 11 , wherein the additional impurity is doped during or after forming the second semiconductor layer. 
     
     
         19 . The method of fabricating the optoelectronic device of  claim 18 , wherein the method for doping the additional impurity comprises ion implantation. 
     
     
         20 . The method of fabricating the optoelectronic device of  claim 11 , wherein a doping temperature for doping the additional impurity is between 800 to 1200° C.