Edge Illuminated Photodiodes

Abstract

This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

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         6 . An edge illuminated photodiode comprising:
 a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type and a second side having a region doped with an impurity of a second conductivity side;   an anode metallization layer; and   a cathode metallization layer.   
     
     
         7 . The edge illuminated photodiode of  claim 6 , wherein said second side is adjacent to said first side. 
     
     
         8 . The edge illuminated photodiode of  claim 6  wherein said anode metallization layer is located on said second side. 
     
     
         9 . The edge illuminated photodiode of  claim 6 , wherein said cathode metallization layer is located on a side parallel to said second side. 
     
     
         10 . The edge illuminated photodiode of  claim 6  wherein the first conductivity type is p-type. 
     
     
         11 . The edge illuminated photodiode of  claim 6  wherein the first conductivity type is n-type. 
     
     
         12 . The edge illuminated photodiode of  claim 11  wherein the n-type conductivity is achieved using a n-type dopant. 
     
     
         13 . The edge illuminated photodiode of  claim 12  wherein the n-type dopant is at least one of phosphorus, arsenic, or antimony. 
     
     
         14 . The edge illuminated photodiode of  claim 12  wherein the n-type dopant creates a n+ doping layer and wherein said n+ doping layer is approximately 0.5 um to 1 pm deep. 
     
     
         15 . The edge illuminated photodiode of  claim 6  wherein the impurity of a second conductivity type is a p-type dopant. 
     
     
         16 . The edge illuminated photodiode of  claim 15  wherein the p-type dopant is at least one of boron or InP/InGaAs. 
     
     
         17 . The edge illuminated photodiode of  claim 6  wherein the cathode metallization layer comprises gold. 
     
     
         18 . An edge illuminated photodiode comprising:
 a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type, a second side having a region doped with an impurity of a second conductivity side, and a third side wherein an inner face of said third side forms an angle greater than 90 degrees with at least one other side of the substrate;   an anode metallization layer and   a cathode metallization layer.   
     
     
         19 . A photodiode comprising:
 a substrate with at least a plurality of sides, wherein said plurality of sides comprise a first side having a region doped with an impurity of a first conductivity type and a second side adjacent to said first side and comprising a region doped with an impurity of a second conductivity side;   an anode metallization layer; and   a cathode metallization layer, wherein at least one side of said substrate is subject to texturization.