Composition, laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor

Abstract

A composition includes the following (a) to (c). (a) an organic compound having a hydroxy group; (b) a first cross-linking agent that is at least one organic silicon compound selected from the group including (b-1) an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, (b-2) a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, (b-3) a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and (b-4) a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and (c) a photocationic polymerization initiator.

What is claimed is: 
     
         1 . A composition comprising:
 (a) an organic compound having a hydroxy group;   (b) a first cross-linking agent that is at least one organic silicon compound selected from the group including
 (b-1) an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, 
 (b-2) a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, 
 (b-3) a cyclic organic silicon compound including a siloxane unit (D unit) represented by R 1 R 2 SiO 2/2  in the molecule, any one of or both of R 1  and R 2  being a cyclic ether group, and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and 
 (b-4) a cyclic organic silicon compound including a siloxane unit (T unit) represented by R 3 SiO 3/2  in the molecule, R 3  being a cyclic ether group, and having two or more cyclic ether groups in the molecule; and 
   (c) a photocationic polymerization initiator.   
     
     
         2 . The composition according to  claim 1 , wherein
 the two or more cyclic ether groups included in the first cross-linking agent are any one of or both of a group including an epoxy ring and a group including an oxetanyl ring.   
     
     
         3 . The composition according to  claim 1 , further comprising:
 (d) a second cross-linking agent that is an organic compound having two or more cyclic ether groups.   
     
     
         4 . The composition according to  claim 3 , wherein
 a ratio of a sum of mass of the first cross-linking agent and the second cross-linking agent to a total sum of mass of the organic compound having a hydroxy group, the first cross-linking agent, and the second cross-linking agent is 40 mass % to 90 mass %, and   a ratio of mass of the second cross-linking agent to the total sum is 5 mass % to 30 mass %.   
     
     
         5 . The composition according to  claim 3 , wherein
 the second cross-linking agent is a compound having an aromatic ring.   
     
     
         6 . The composition according to  claim 5 , wherein
 the second cross-linking agent is a compound represented by Formula (d1) below.   
       
         
           
           
               
               
           
         
         (R 2  and R 3  are each a cyclic ether group. R 2  and R 3  may be identical to each other or may be different from each other.) 
       
     
     
         7 . The composition according to  claim 6 , wherein
 the cyclic ether group included in the second cross-linking agent is any one of or both of a group including an epoxy ring and a group including an oxetanyl ring.   
     
     
         8 . The composition according to  claim 1 , wherein
 the organic compound having a hydroxy group includes a phenolic hydroxy group.   
     
     
         9 . A method of manufacturing a laminate, comprising:
 applying a solution containing the composition according to  claim 1  over a conductive layer to form a coating film;   selectively irradiating the coating film with light including light having an absorption wavelength of the photocationic polymerization initiator included in the coating film to form a latent image in the light-irradiated region of the coating film; and   developing the coating film with an alkaline solution to form an insulator layer.   
     
     
         10 . The method of manufacturing a laminate according to  claim 9 , further comprising:
 prior to forming the coating film, applying a surface treatment on at least a region to be provided with the coating film by using a silane coupling agent having a cyclic ether group.   
     
     
         11 . A laminate, comprising:
 a conductive layer; and   an insulator layer formed by cationic-polymerization of the composition according to  claim 1 .   
     
     
         12 . The laminate according to  claim 11 ,
 wherein the conductive layer is covered with the insulator layer.   
     
     
         13 . A method of manufacturing a transistor, comprising:
 forming a gate electrode on a substrate;   applying a solution including the composition according to  claim 1  over the gate electrode to form a coating film;   selectively irradiating the coating film with light including light having an absorption wavelength of a photocationic polymerization initiator included in the coating film to form a latent image in the light-irradiated region of the coating film;   developing the coating film with an alkaline solution to form an insulator layer; and   forming a source electrode and a drain electrode on the surface of a layer including the insulator layer.   
     
     
         14 . The method of manufacturing a transistor according to  claim 13 , further comprising:
 prior to forming the coating film, applying a surface treatment on at least a region to be provided with the coating film by using a first silane coupling agent having a cyclic ether group.   
     
     
         15 . The method of manufacturing a transistor according to  claim 13 ,
 wherein at least one of the gate electrode, the source electrode, and the drain electrode is formed by:   applying a formation material containing a second silane coupling agent having a group capable of capturing a metal, which is an electroless plating catalyst, to form a base film; and   capturing the metal on the surface of the base film and then performing electroless plating.   
     
     
         16 . The method of manufacturing a transistor according to  claim 15 ,
 wherein the source electrode and the drain electrode are formed by:   forming a source base film and a drain base film, each being the base film; and   then capturing the metal on the surface of each of the source base film and the drain base film to perform electroless plating.   
     
     
         17 . The method of manufacturing a transistor according to  claim 16 ,
 wherein the source base film and the drain base film are formed as a continuous film.   
     
     
         18 . The method of manufacturing a transistor according to  claim 15 ,
 wherein the gate electrode is formed by:   forming a gate base film, which is the base film; and   then capturing the metal on the surface of the gate base film to perform electroless plating.   
     
     
         19 . The method of manufacturing a transistor according to  claim 15 ,
 wherein the second silane coupling agent has an amino group.   
     
     
         20 . The method of manufacturing a transistor according to  claim 19 ,
 wherein the second silane coupling agent is a primary amine or a secondary amine.   
     
     
         21 . The method of manufacturing a transistor according to  claim 15 ,
 wherein the layer including the insulator layer includes: the insulator layer; and   an organic semiconductor layer disposed on the insulator layer and having a surface on which the source electrode and the drain electrode are formed.   
     
     
         22 . The method of manufacturing a transistor according to  claim 15 , comprising:
 forming the source electrode and the drain electrode; and   then forming an organic semiconductor layer that is in contact with surfaces of the source electrode and the drain electrode that face each other.   
     
     
         23 . The method of manufacturing a transistor according to  claim 21 , comprising, prior to forming the source electrode and the drain electrode:
 forming a resist layer having an opening corresponding to the source electrode and the drain electrode and capturing the metal on the surface of the base film formed on the surface exposed at least in the opening;   performing first electroless plating and then removing the resist layer; and   performing second electroless plating on the surface of an electrode formed by the first electroless plating to form the source electrode and the drain electrode,   wherein the energy level difference between the work function of a metal material used in the second electroless plating and the energy level of a molecular orbital used for electron transfer in a formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a metal material used in the first electroless plating and the energy level of the molecular orbital.   
     
     
         24 . The method of manufacturing a transistor according to  claim 13 ,
 wherein the substrate is made of a non-metallic material.   
     
     
         25 . The method of manufacturing a transistor according to  claim 24 ,
 wherein the substrate is made of a resin material.   
     
     
         26 . The method of manufacturing a transistor according to  claim 25 ,
 wherein the substrate has flexibility.   
     
     
         27 . A transistor, comprising:
 a source electrode and a drain electrode;   a gate electrode provided corresponding to a channel between the source electrode and the drain electrode;   a semiconductor layer provided in contact with the source electrode and the drain electrode; and   an insulator layer disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode,   wherein the insulator layer is formed by cationic polymerization of the composition according to  claim 1 .   
     
     
         28 . The transistor according to  claim 27 ,
 wherein at least one of the gate electrode, the source electrode, and the drain electrode is laminated on a base film containing a silane coupling agent having a group capable of capturing a metal, which is an electroless plating catalyst.   
     
     
         29 . The transistor according to  claim 27 ,
 wherein the semiconductor layer is an organic semiconductor layer.   
     
     
         30 . The transistor according to  claim 29 ,
 wherein the source electrode has a first electrode and a second electrode formed to cover the first electrode;   the drain electrode has a third electrode and a fourth electrode formed to cover the third electrode;   the energy level difference between the work function of a formation material of the second electrode and the energy level of a molecular orbital used for electron transfer in a formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a formation material of the first electrode and the energy level of the molecular orbital; and   the energy level difference between the work function of a formation material of the fourth electrode and the energy level of the molecular orbital used for electron transfer in the formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a formation material of the third electrode and the energy level of the molecular orbital.   
     
     
         31 . The transistor according to  claim 27 , which is formed on a substrate made of a non-metallic material. 
     
     
         32 . The transistor according to  claim 31 ,
 wherein the substrate is made of a resin material.   
     
     
         33 . The transistor according to  claim 32 ,
 wherein the substrate has flexibility.