Magnetic tunnel junction and method for fabricating a magnetic tunnel junction

Abstract

An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

1 . A method for fabricating a device, comprising:
 fabricating a magnetic tunnel junction, including:
 forming a bottom electrode on a substrate; 
 forming a pin layer on the bottom electrode; 
 forming a barrier layer on the pin layer; 
 forming a free layer on the barrier layer; 
 etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode; 
 forming a top electrode on the free layer; 
 forming a hardmask layer on the top electrode; and 
 etching the hardmask layer, the top electrode, the pin layer, and the bottom electrode. 
   
     
     
         2 . The method of  claim 1 , wherein the fabricating further comprises forming a metal line on the top electrode. 
     
     
         3 . The method of  claim 1 , wherein the fabricating further comprises:
 forming a via on the top electrode; and   forming a metal line that is coupled through the via to the top electrode.   
     
     
         4 . The method of  claim 1 , further comprising integrating the magnetic tunnel junction into at least one of a first electronic device having a first memory and a second electronic device requiring a second memory. 
     
     
         5 . A non-transitory computer-readable medium configured to cause a lithographic device to perform a method for fabricating a magnetic tunnel junction, where the method comprises:
 forming a bottom electrode on a substrate;   forming a pin layer on the bottom electrode;   forming a barrier layer on the pin layer;   forming a free layer on the barrier layer;   etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode;   forming a top electrode on the free layer;   forming a hardmask layer on the top electrode; and   etching the hardmask layer, the top electrode, the pin layer, and the bottom electrode.   
     
     
         6 . The non-transitory computer-readable medium of  claim 5 , further comprising instructions stored thereon configured to cause the lithographic device to form a metal line on the top electrode. 
     
     
         7 . The non-transitory computer-readable medium of  claim 5 , further comprising instructions stored thereon configured to cause the lithographic device to:
 form a via on the top electrode; and   form a metal line that is coupled through the via to the top electrode.   
     
     
         8 . An apparatus, comprising:
 a magnetic tunnel junction, including:
 a bottom electrode on a substrate; 
 a pin layer on the bottom electrode; 
 a barrier layer on the pin layer; 
 a free layer on the barrier layer; 
 a top electrode on the free layer; and 
 an insulating cap film seal formed adjacent to the top electrode, the free layer, the barrier layer, and the pin layer. 
   
     
     
         9 . The apparatus of  claim 8 , further comprising a metal line on the top electrode. 
     
     
         10 . The apparatus of  claim 8 , further comprising:
 a via on the top electrode; and   a metal line that is coupled through the via to the top electrode.   
     
     
         11 . The apparatus of  claim 8 , further comprising at least one of a first electronic device having a first memory and a second electronic device requiring a second memory, with which the magnetic tunnel junction is integrated. 
     
     
         12 . The apparatus of  claim 8 , further comprising an encapsulation film formed adjacent to the top electrode, the insulating cap film seal, the pin layer, and the bottom electrode. 
     
     
         13 . The apparatus of  claim 8 , wherein the insulating cap film seal is not adjacent to the bottom electrode. 
     
     
         14 . The apparatus of  claim 8 , wherein a cross-section of the pin layer that is parallel to the substrate is greater than a cross-section of the barrier layer that is parallel to the substrate. 
     
     
         15 . The apparatus of  claim 8 , wherein a portion of the insulating cap film seal that is adjacent to the free layer and the barrier layer is perpendicular to the portion of the insulating cap film seal that is adjacent to the pin layer. 
     
     
         16 . A method for fabricating a magnetic tunnel junction, comprising:
 a step for forming a bottom electrode on a substrate;   a step for forming a pin layer on the bottom electrode;   a step for forming a barrier layer on the pin layer;   a step for forming a free layer on the barrier layer;   a step for etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode;   a step for forming a top electrode on the free layer;   a step for forming a hardmask layer on the top electrode; and   a step for etching the hardmask layer, the top electrode, the pin layer, and the bottom electrode.   
     
     
         17 . The method of  claim 16 , further comprising a step for forming a metal line on the top electrode. 
     
     
         18 . The method of  claim 16 , further comprising:
 a step for forming a via on the top electrode; and   a step for forming a metal line that is coupled through the via to the top electrode.