Light-emitting device

Abstract

A light-emitting device comprises: a conductive substrate; a conductive structure formed on the substrate, defining a first region and a second region laterally adjacent to the first region; a light-emitting structure formed on the first region; and a dielectric structure comprising a first dielectric layer and a second dielectric layer within the second region.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a conductive substrate;   a conductive structure formed on the substrate, defining a first region and a second region laterally adjacent to the first region;   a light-emitting structure formed on the first region; and   a dielectric structure comprising a first dielectric layer and a second dielectric layer within the second region.   
     
     
         2 . The light-emitting device according to  claim 1 , wherein the light-emitting structure comprises a sidewall, and the dielectric structure further covers the sidewall. 
     
     
         3 . The light-emitting device according to  claim 2 , wherein a thickness of the dielectric structure close to the conductive structure is thicker than that of the dielectric structure far away from the conductive structure. 
     
     
         4 . The light-emitting device according to  claim 1 , wherein the first dielectric layer and the second dielectric layer comprises SiO 2 , Al 2 O 3 , Si 3 N 4 , ZrO 2  or TiO 2 . 
     
     
         5 . The light-emitting device according to  claim 1 , wherein refraction indexes of the first dielectric layer and a second dielectric layer are different from that of the light-emitting structure. 
     
     
         6 . The light-emitting device according to  claim 1 , wherein the light-emitting structure comprises an upper surface, and further comprises a passivation layer formed on the upper surface. 
     
     
         7 . The light-emitting device according to  claim 6 , wherein the passivation layer is a single layer. 
     
     
         8 . The light-emitting device according to  claim 6 , wherein the passivation layer comprises SiO 2 , Al 2 O 3 , Si 3 N 4 , ZrO 2  or TiO 2 . 
     
     
         9 . The light-emitting device according to  claim 6 , further comprising an electrode penetrating the passivation layer to connect the upper surface of the light-emitting structure. 
     
     
         10 . The light-emitting device according to  claim 6 , wherein the refraction index of the passivation layer is different from that of the light-emitting structure. 
     
     
         11 . The light-emitting device according to  claim 6 , wherein one of the first dielectric layer and the second dielectric layer comprises the same material with that of the passivation layer. 
     
     
         12 . The light-emitting device according to  claim 1 , wherein the light-emitting structure comprises a bottom surface opposite the upper surface, and a reflective layer is formed below the light-emitting structure, and a portion of the bottom surface is covered by the reflective layer. 
     
     
         13 . The light-emitting device according to  claim 12 , wherein the conductive structure is in contact with the other portion of the bottom surface and encloses the reflective layer. 
     
     
         14 . The light-emitting device according to  claim 1 , wherein the sidewall of the light-emitting structure is an inclined sidewall. 
     
     
         15 . The light-emitting device according to  claim 1 , wherein the conductive structure comprises a conductive layer in contact with the light-emitting structure and a connecting layer between the conductive layer and the conductive substrate. 
     
     
         16 . The light-emitting device according to  claim 15 , wherein the material of the connecting layer comprises metal, silver glue, conductive polymer, polymer materials mixed with conductive materials, or anisotropic conductive film. 
     
     
         17 . The light-emitting device according to  claim 1 , wherein the material of the conductive substrate comprises germanium (Ge), copper (Cu), aluminum (Al), molybdenum (Mo), tungsten copper (CuW), silicon aluminum (SiAl), gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), silicon (Si), gallium nitride (GaN), aluminum nitride (AlN) or diamond-like carbon (DLC). 
     
     
         18 . The light-emitting device according to  claim 1 , wherein the first region is larger than the second region in a cross-sectional view.