Anchoring Structure and Intermeshing Structure

Abstract

An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure.

What is claimed is: 
     
         1 . An anchoring structure for a device on a substrate, the structure comprising:
 a structured device layer on the substrate, the structured device layer comprising at least one topology structure and a main surface facing away from the substrate; and   a metal structure on the structured device layer, the metal structure extending at least over part of the topology structure;   wherein the structured device layer comprises one or more electrically insulating layers, and the topology structure comprises a recess in the structured device layer with a depth that is smaller than a thickness of the structured device layer, or   wherein the structured device layer comprises only a semiconducting layer without doping or with a single doping, and the topology structure comprises a recess in the structured device layer with a depth that is smaller than the thickness of the structured device layer, or   wherein the topology structure comprises a structure projecting beyond the main surface of the structured device layer.   
     
     
         2 . The anchoring structure as claimed in  claim 1 , wherein the structured device layer comprises a plurality of topology structures. 
     
     
         3 . The anchoring structure as claimed in  claim 2 , wherein the plurality of topology structures is arranged on the substrate in a two-dimensionally regular or irregular manner. 
     
     
         4 . An anchoring structure comprising:
 a device comprising a main surface;   a recess extending into the device starting from the main surface of the device; and   a conductor layer structure which, with a proportion of at least 20% of a cross-sectional area of the conductor layer structure, runs within the recess below the main surface of the device over a length of the conductor layer structure, the conductor layer structure comprising at least one metal layer.   
     
     
         5 . The anchoring structure as claimed in  claim 4 , wherein the conductor layer structure, over its length, runs entirely within the recess below the main surface of the device. 
     
     
         6 . The anchoring structure as claimed in  claim 4 , wherein the recess comprises a trench in the device. 
     
     
         7 . The anchoring structure as claimed in  claim 4 , wherein the conductor layer structure comprises a main surface that faces away from a bottom of the recess and lies exposed at least with regard to part of the conductor layer structure. 
     
     
         8 . The anchoring structure as claimed in  claim 4 , wherein part of the conductor layer structure does not run entirely within the recess with regard to a length of the recess, and amounts to a maximum of 5% of an overall length of the conductor layer structure with regard to the recess. 
     
     
         9 . The anchoring structure as claimed in  claim 4 , wherein the recess comprises a bottom, the anchoring structure further comprising a further conductor layer structure arranged between the conductor layer structure and the bottom of the recess, and wherein the further conductor layer structure is coupled to a terminal structure, so that the further conductor layer structure may be connected to an electrical potential. 
     
     
         10 . The anchoring structure as claimed in  claim 9 , further comprising an insulating layer, wherein the insulating layer is arranged between the conductor layer structure and the further conductor layer structure, so that the conductor layer structure is electrically insulated from the further conductor layer structure. 
     
     
         11 . The anchoring structure as claimed in  claim 4 , wherein the recess is a trench comprising a trench bottom, the trench bottom comprising a projection, and the conductor layer structure comprising a metal structure comprising an indentation at an area facing the projection. 
     
     
         12 . The anchoring structure as claimed in  claim 11 , wherein a maximum difference in height between a trench bottom of the recess and the projection amounts to at least 200 nm or at least 5% of a depth of the recess. 
     
     
         13 . The anchoring structure as claimed in  claim 11 , wherein the recess comprises a plurality of projections. 
     
     
         14 . The anchoring structure as claimed in  claim 4 , wherein the conductor layer structure fills a width of the recess up to at least 30% of a depth of the recess. 
     
     
         15 . The anchoring structure as claimed in  claim 4 , wherein the recess comprises at least one portion comprising a width which deviates from a further portion of the recess. 
     
     
         16 . An anchoring structure comprising:
 a substrate comprising a main surface, a monocrystalline area or an epitaxial area extending as far as the main surface of the substrate;   a recess in the monocrystalline area or the epitaxial area on the main surface of the substrate; and   a conductor layer structure comprising a metal layer on the main surface of the substrate, wherein the conductor layer structure extends into the recess as far as a bottom of the recess.