Wiring substrate and method of manufacturing the same, and semiconductor device and method of manufacturing the same

Abstract

A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.

What is claimed is: 
     
         1 . A wiring substrate comprising:
 a base having a predetermined thickness;   a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;   a wiring provided in the base and electrically connected to the electrode portions; and   a resin layer formed on the base to fill between the plurality of electrode portions,   wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and   wherein the resin layer is at substantially the same height as the maximum height of the electrode portion when heated to a predetermined temperature and expanded.   
     
     
         2 . The wiring substrate according to  claim 1 , wherein the base is formed of a semiconductor or an insulator. 
     
     
         3 . The wiring substrate according to  claim 1 , wherein the electrode portion is formed of one of gold, copper, nickel and an alloy containing at least one of these metals. 
     
     
         4 . The wiring substrate according to  claim 1 , wherein a formation pitch of the electrode portion is  10  micrometers or less. 
     
     
         5 . A semiconductor device comprising:
 a wiring substrate including:
 a base having a predetermined thickness; 
 a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; 
 a wiring provided in the base and electrically connected to the electrode portions; 
 a resin layer formed on the base to fill between the plurality of electrode portions; and 
 a semiconductor element provided in the base, 
   wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and   wherein the resin layer is at substantially the same height as the maximum height when heated to a predetermined temperature and expanded.   
     
     
         6 . A semiconductor device comprising:
 a wiring substrate including:
 a base having a predetermined thickness; 
 a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; 
 a wiring provided in the base and electrically connected to the electrode portions; 
 a resin layer formed on the base to fill between the plurality of electrode portions; and 
 a semiconductor chip or a semiconductor package provided in the base, 
   wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and   wherein the resin layer is at substantially the same height as the maximum height when heated to a predetermined temperature and expanded.