Semiconductor Constructions, Methods of Forming Conductive Structures and Methods of Forming DRAM Cells

Abstract

Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

1 - 31 . (canceled) 
     
     
         32 . A semiconductor construction comprising:
 an opening extending into a semiconductor substrate; the opening being lined with silicon dioxide; and   a conductive structure extending into the lined opening and having a first portion directly against a second portion; the first and second portions being a same composition material as one another but differing in density from one another by at least about a factor of 1.25; the first and second portions both extending into the lined opening but only the first portion contacting the silicon dioxide.   
     
     
         33 . The construction of  claim 32  wherein the second portion has a higher density than the first portion and is over the first portion. 
     
     
         34 . The construction of  claim 32  wherein the material is selected from the group consisting of titanium nitride, ruthenium, ruthenium oxide, iridium, iridium oxide, rhenium and rhenium oxide. 
     
     
         35 . The construction of  claim 32  wherein the material consists of titanium nitride. 
     
     
         36 . The semiconductor construction of  claim 32  wherein the second portion has a higher density than the first portion and is over the first portion; and
 wherein the material is selected from the group consisting of ruthenium, ruthenium oxide, rhenium and rhenium oxide. 
 
     
     
         37 . A semiconductor construction of  claim 32  wherein the first portion has a higher density than the second portion and is under the second portion. 
     
     
         38 . The construction of  claim 37  wherein the material is selected from the group consisting of titanium nitride, ruthenium, ruthenium oxide, iridium, iridium oxide, rhenium and rhenium oxide. 
     
     
         39 . The construction of  claim 37  wherein the material consists of titanium nitride. 
     
     
         40 . A method of forming a conductive structure, comprising:
 forming a first portion of the conductive structure by depositing an electrically conductive material within a silicon dioxide lined trench utilizing a first deposition method; the first deposition method having a first deposition rate;   forming a second portion of the conductive structure by depositing the electrically conductive material with a second deposition method; the second deposition method having a second deposition rate; the second deposition rate being different from the first deposition rate by at least about a factor of 3; and   wherein the electrically conductive material comprises rhenium.   
     
     
         41 . The method of  claim 40  further comprising annealing the first and second portions at a temperature of at least about 950° C. for a time of at least about 20 seconds. 
     
     
         42 . The method of  claim 40  wherein one of the first and second deposition methods is ALD and the other is CVD. 
     
     
         43 . The method of  claim 40  wherein one of the first and second deposition methods is CCVD. 
     
     
         44 . The method of  claim 40  wherein the second deposition rate is faster than the first deposition rate. 
     
     
         45 . A method of forming a conductive structure, comprising:
 forming an opening to extend into a semiconductor material;   forming a first portion of the conductive structure within the opening by depositing an electrically conductive material within the opening utilizing a first deposition method;   forming a second portion of the conductive structure over the first portion by depositing the electrically conductive material with a second deposition method; the second deposition method being a different type of deposition method relative to the first deposition method and having a faster deposition rate than the first deposition method by at least about a factor of 3;   wherein the electrically conductive material is selected from the group consisting of titanium nitride, ruthenium, ruthenium oxide, iridium, iridium oxide, rhenium and rhenium oxide; and   wherein:
 the opening has a width along a cross-section; 
 the first portion has a thickness of less than one-half of the width and lines a periphery of the opening; and 
 the second portion is formed within the lined opening. 
   
     
     
         46 . The method of  claim 45  wherein the opening is a trench, and wherein the conductive structure is a line extending along an interior of the trench.