Semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Abstract

A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

1 . A semiconductor film comprising:
 a cluster of semiconductor quantum dots each having a metal atom; and   ligands coordinating to respective semiconductor quantum dots,   the semiconductor quantum dots having an average shortest inter-dot distance of less than 0.45 nm.   
     
     
         2 . The semiconductor film according to  claim 1 , wherein the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.30 nm. 
     
     
         3 . The semiconductor film according to  claim 1 , wherein the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.20 nm. 
     
     
         4 . The semiconductor film according to  claim 1 , wherein the semiconductor quantum dots are at least one selected from the group consisting of PbS, PbSe, InN, InAs, InSb, and InP. 
     
     
         5 . The semiconductor film according to  claim 1 , wherein an average particle diameter of the semiconductor quantum dots is from 2 nm to 15 nm. 
     
     
         6 . The semiconductor film according to  claim 4 , wherein the semiconductor quantum dots are PbS. 
     
     
         7 . A solar cell comprising the semiconductor film according to  claim 1 . 
     
     
         8 . A light-emitting diode comprising the semiconductor film according to  claim 1 . 
     
     
         9 . A thin film transistor comprising the semiconductor film according to  claim 1 . 
     
     
         10 . An electronic device comprising the semiconductor film according to  claim 1 .