Chemical mechanical polishing conditioner capable of controlling polishing depth

Abstract

Provided is a chemical mechanical polishing conditioner capable of controlling a polishing depth. The CMP conditioner capable of controlling the polishing depth comprises a substrate; a binding layer disposed on the substrate; multiple abrasive units placed on the binding layer; and multiple abrasive terminal units placed on the binding layer. Each abrasive unit has an abrasive unit substrate and an abrasive layer, and the abrasive layer is a diamond film formed by chemical vapor deposition and has multiple abrasive tips. The abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units to form a protrusion height. Accordingly, the CMP conditioner controls the polishing depth of an article to be conditioned.

What is claimed is: 
     
         1 . A chemical mechanical polishing conditioner capable of controlling the polishing depth, comprising:
 a substrate;   a binding layer disposed on the substrate;   multiple abrasive units placed on the binding layer, each abrasive unit having an abrasive layer and an abrasive unit substrate, the abrasive layer being a diamond film formed by chemical vapor deposition and having multiple abrasive tips; and   multiple abrasive terminal units placed on the binding layer;   wherein the abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units, and a protrusion height is between the abrasive units and the abrasive terminal units.   
     
     
         2 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive units and the abrasive terminal units are arranged annularly. 
     
     
         3 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive units are arranged alternately with the abrasive terminal units. 
     
     
         4 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive units have a first tip height and a second tip height and the first tip height is different from the second tip height. 
     
     
         5 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 4 , wherein a height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers, inclusive. 
     
     
         6 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 5 , wherein a height difference between the first tip height and the second tip height is 15 micrometers to 60 micrometers, inclusive. 
     
     
         7 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 4 , wherein the abrasive units have a third tip height and a fourth tip height. 
     
     
         8 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive tips of the abrasive units are relatively higher than the surfaces of the abrasive terminal units by 5 micrometers to 100 micrometers, inclusive. 
     
     
         9 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein heights of the abrasive units are equal, and a planarized surface of the chemical mechanical polishing conditioner is formed by the abrasive units. 
     
     
         10 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive tips are in the shape of knife edges, cones, arcs, cylinders, pyramids, or prisms. 
     
     
         11 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein alignment directions of the abrasive tips are uniform, partially uniform, or different. 
     
     
         12 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein tip angles of the abrasive tips are equal, partially equal, or different. 
     
     
         13 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein horizontal distances between any two neighboring abrasive tips are equal, partially equal, or different. 
     
     
         14 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein thicknesses of the abrasive units are equal, partially equal, or different. 
     
     
         15 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein a middle layer is disposed between the abrasive layer and the abrasive unit substrate. 
     
     
         16 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 15 , wherein the middle layer is made of the group consisting of aluminum oxide, silicon carbide, and aluminum nitride. 
     
     
         17 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive unit substrate is a conductive substrate or an insulating substrate. 
     
     
         18 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the abrasive terminal units are made of an anti-abrasion material. 
     
     
         19 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the binding layer is made of a ceramic material, a brazing material, an electroplating material, a metallic material, or a polymeric material. 
     
     
         20 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 19 , wherein the polymeric material is epoxy resin, polyester resin, polyacrylate resin, or phenol resin. 
     
     
         21 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 19 , wherein the brazing material is made of the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, and any combination thereof. 
     
     
         22 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the substrate is a stainless steel substrate, a die steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or any combination thereof. 
     
     
         23 . The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in  claim 1 , wherein the substrate is a flat substrate or a notch substrate.