US2015290765A1PendingUtilityA1

Substrate processing method

Assignee: TOSHIBA KKPriority: Apr 11, 2014Filed: Mar 11, 2015Published: Oct 15, 2015
Est. expiryApr 11, 2034(~7.7 yrs left)· nominal 20-yr term from priority
H10P 95/062H10P 70/277H10P 70/237H10P 52/403B24B 37/044B24B 1/00B24B 53/007B24B 53/017C11D 3/0073C11D 7/3245C11D 7/265B24B 37/107C11D 7/3209C11D 7/3281B24B 37/04B24B 37/10B24B 37/042C11D 2111/22
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Claims

Abstract

In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.

Claims

exact text as granted — not AI-modified
1 . A substrate processing method, comprising:
 polishing, on a polishing pad supplied with slurry, a surface of an object to be polished disposed on a substrate;   polishing the surface of the object to be polished on the polishing pad while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered after the polishing process using the slurry; and   cleaning the surface of the object to be polished on the polishing pad by supplying rinse liquid on the polishing pad after the polishing process using the water.   
     
     
         2 . The method according to  claim 1 , wherein the rinse liquid has an acid or alkaline property same as the slurry. 
     
     
         3 . The method according to  claim 1 , wherein the rinse liquid has dissolving property for at least a part of the surface of the object to be polished. 
     
     
         4 . The method according to  claim 1 , wherein the object includes Cu at the surface, and the rinse liquid has pH of 8 or more and includes following components (A) to (F).
 (A) Tetramethyl ammonium hydroxide   (B) Diamines selected from a group including ethylenediamin and 1,2-diaminopropane   (C) Organic acid selected from a group including oxalic acid, citric acid, tartaric acid, malic acid, and picoline acid   (D) Histidine or derivative thereof   (E) At least one kind selected from a group including benzotriazol, imidazole, triazole, tetrazole, and derivative thereof   (F) Water   
     
     
         5 . A substrate processing method, comprising:
 polishing, on a polishing pad supplied with slurry, surface of an object to be polished including Cu at the surface;   polishing the surface of the object to be polished including Cu at the surface on the polishing pad while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered after the polishing process using the slurry; and   cleaning the surface of the object to be polished on the polishing pad by supplying rinse liquid on the polishing pad after the polishing process using the water,   wherein the rinse liquid has pH of 8 or more and includes following components (A) to (F).   (A) Tetramethyl ammonium hydroxide   (B) Diamines selected from a group including ethylenediamin and 1,2-diaminopropane   (C) Organic acid selected from a group including oxalic acid, citric acid, tartaric acid, malic acid, and picoline acid   (D) Histidine or derivative thereof   (E) At least one kind selected from a group including benzotriazol, imidazole, triazole, tetrazole, and derivative thereof   (F) Water   
     
     
         6 . The method according to  claim 1 , wherein the slurry includes an abrasive grain and processing solution. 
     
     
         7 . The method according to  claim 6 , wherein the abrasive grain is at least one of SiO 2 , Al 2 O 3 , CeO 2 , Mn 2 O 3 , and diamond. 
     
     
         8 . The method according to  claim 6 , wherein the processing solution is at least one of a modifying agent of the object to be polished, dispersing agent of the abrasive grain, a surfactant agent, a chelate agent, and anticorrosive. 
     
     
         9 . The method according to  claim 1 , wherein the water is deionized water. 
     
     
         10 . The method according to  claim 1 , wherein the object to be polished is consecutively processed on the same polishing pad. 
     
     
         11 . The method according to  claim 1 , further comprising cleaning the surface of the object to be polished with a roll brush after polishing the surface with the rinse liquid. 
     
     
         12 . The method according to  claim 1 , wherein the rinse liquid has dissolving property for at least a part of a residue on the surface.

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