US2015287714A1PendingUtilityA1

Semiconductor device

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Assignee: SEIKO INSTR INCPriority: Apr 17, 2012Filed: Jun 22, 2015Published: Oct 8, 2015
Est. expiryApr 17, 2032(~5.7 yrs left)· nominal 20-yr term from priority
Inventors:Tomomitsu Risaki
H10D 84/204H10D 62/126H10D 8/411H10D 89/611H10D 8/00H01L 29/8611H01L 27/0255H01L 29/0692
46
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Claims

Abstract

A semiconductor device having a clamp diode has a breakdown voltage adjusting first conductivity type low concentration region provided on a semiconductor substrate. A second conductivity type high concentration region of circular shape is provided within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any other low concentration region. A first conductivity type high concentration region is provided within the first conductivity type low concentration region, without being held in contact with the second conductivity type high concentration region.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate;   a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate;   a second conductivity type high concentration region provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region, the second conductivity type high concentration region being circular; and   a first conductivity type high concentration region provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.   
     
     
         2 . A semiconductor device according to  claim 1 , wherein the first conductivity type high concentration region has a ring shape and is provided so as to surround the second conductivity type high concentration region. 
     
     
         3 . A semiconductor device according to  claim 2 , wherein at least an inner part of the ring shape of the first conductivity type high concentration region is circular.

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