Semiconductor light emitting device and method for manufacturing the same

Abstract

According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor light emitting device comprising:
 a first conductive layer;   a first semiconductor layer of a first conductivity type;   a second semiconductor layer of a second conductivity type, the second semiconductor layer being provided between the first conductive layer and the first semiconductor layer; and   a light emitting part provided between the first semiconductor layer and the second semiconductor layer;   the first conductive layer including a first region and a second region provided between the first region and the second semiconductor layer, the second region being in contact with the second semiconductor layer,   the first conductive layer including a polycrystal having grain boundaries, the first conductive layer being transmittable with respect to light emitted from the light emitting part,   an average of distances between the grain boundaries in the second region being 150 nanometers or less.   
     
     
         22 . The device according to  claim 21 , wherein
 a thickness of the second region is 100 nanometers or less.   
     
     
         23 . The device according to  claim 21 , wherein
 sum of a thickness of the first region and a thickness of the second region is one of more than 150 nanometers and 200 nanometers or less and 260 nanometers or more and 330 nanometers or less.   
     
     
         24 . The device according to  claim 21 , wherein the first region and the second region include an oxide including at least one of elements selected from the group of In, Sn, Zn, and Ti. 
     
     
         25 . The device according to  claim 21 , further comprising a second conductive layer,
 the first conductive layer including a first portion and a second portion arranged with the first portion in a first direction crossing a second direction from the first semiconductor layer toward the second semiconductor layer,   a part of the second conductive layer overlapping the first portion in the second direction,   another part of the second conductive layer not overlapping the second portion,   the first region being provided in the first portion and the second region being not provided in the first portion,   the first region and the second region being provided in the second portion.   
     
     
         26 . The device according to  claim 25 , wherein the second conductive layer includes a metal. 
     
     
         27 . The device according to  claim 21 , wherein a thickness of the second region is less than a thickness of the first region. 
     
     
         28 . The device according to  claim 21 , wherein a thickness of the second region is 50 nanometers or less. 
     
     
         29 . The device according to  claim 21 , wherein a thickness of the first region is 50 nanometers or more and 400 nanometers or less. 
     
     
         30 . The device according to  claim 21 , wherein the average of the distances is 1 micrometers or less.