Composition, laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor

Abstract

A composition includes the following (a) to (c). (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group.) (b) a second organic compound represented by Formula (2) below (c) a photocationic polymerization initiator

What is claimed is: 
     
         1 . A composition, comprising:
 (a) a first organic compound represented by Formula (1) below;   (b) a second organic compound represented by Formula (2) below; and   (c) a photocationic polymerization initiator.   
       
         
           
           
               
               
           
         
         (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group.) 
       
       
         
           
           
               
               
           
         
       
     
     
         2 . The composition according to  claim 1 , further comprising:
 (d) polyvinyl phenol.   
     
     
         3 . The composition according to  claim 2 ,
 wherein the ratio of the sum of the mass of the first organic compound and the second organic compound to the total sum of the mass of the polyvinyl phenol, the first organic compound, and the second organic compound is 50 mass % to 100 mass %, and   the ratio of the mass of the second organic compound to the total sum is 10 mass % to 30 mass %.   
     
     
         4 . The composition according to  claim 1 , further comprising:
 (e) a third organic compound represented by Formula (3) below.   
       
         
           
           
               
               
           
         
       
     
     
         5 . The composition according to  claim 4 , further comprising:
 (d) polyvinyl phenol.   
     
     
         6 . The composition according to  claim 5 ,
 wherein the ratio of the sum of the mass of the first organic compound, the second organic compound, and the third organic compound to the total sum of the mass of the polyvinyl phenol, the first organic compound, the second organic compound, and the third organic compound is 50 mass % to 100 mass %, and   the ratio of the mass of the second organic second to the total sum is 10 mass % to 30 mass %.   
     
     
         7 . A method of manufacturing a laminate, comprising:
 applying a solution containing the composition according to  claim 1  over a conductive layer to form a coating film; and   irradiating the coating film with light containing light having an absorption wavelength of the photocationic polymerization initiator contained in the coating film to form an insulator layer.   
     
     
         8 . A method of manufacturing a laminate, comprising:
 applying a solution containing the composition according to  claim 1  over a conductive layer to form a coating film;   selectively irradiating the coating film with light containing light of an absorption wavelength of the photocationic polymerization initiator contained in the coating film to form a latent image in the light-irradiated region of the coating film; and   developing the coating film to form an insulator layer.   
     
     
         9 . A laminate, comprising:
 a conductive layer; and   an insulator layer formed by photocationic-polymerization of the composition according to  claim 1 .   
     
     
         10 . The laminate according to  claim 9 ,
 wherein the conductive layer is covered with the insulator layer.   
     
     
         11 . A method of manufacturing a transistor, comprising:
 forming a gate electrode on a substrate;   applying a solution containing the composition according to  claim 1  over the gate electrode to form a coating film;   irradiating the coating film with light containing light having an absorption wavelength of the photocationic polymerization initiator contained in the coating film to form a latent image in the light-irradiated region of the coating film;   developing the coating film to form an insulator layer; and   forming a source electrode and a drain electrode on the surface of a layer including the insulator layer.   
     
     
         12 . The method of manufacturing a transistor according to  claim 11 ,
 wherein the coating film is selectively irradiated with the light.   
     
     
         13 . The method of manufacturing a transistor according to  claim 11 ,
 wherein at least one of the gate electrode, the source electrode, and the drain electrode is formed by:   applying a formation material containing a silane coupling agent having a group capable of capturing a metal, which is an electroless plating catalyst, to form a base film; and   capturing the metal on the surface of the base film and then performing electroless plating.   
     
     
         14 . The method of manufacturing a transistor according to  claim 13 ,
 wherein the source electrode and the drain electrode are formed by:   forming a source base film and a drain base film, each being the base film; and   then capturing the metal on the surface of each of the source base film and the drain base film to perform electroless plating.   
     
     
         15 . The method of manufacturing a transistor according to  claim 14 ,
 wherein the source base film and the drain base film are formed as a continuous film.   
     
     
         16 . The method of manufacturing a transistor according to  claim 13 ,
 wherein the gate electrode is formed by:   forming a gate base film, which is the base film; and   then capturing the metal on the surface of the gate base film to perform electroless plating.   
     
     
         17 . The method of manufacturing a transistor according to  claim 13 ,
 wherein the silane coupling agent has an amino group.   
     
     
         18 . The method of manufacturing a transistor according to  claim 17 ,
 wherein the silane coupling agent is a primary amine or a secondary amine.   
     
     
         19 . The method of manufacturing a transistor according to  claim 13 ,
 wherein the layer including the insulator layer includes: the insulator layer; and an organic semiconductor layer disposed on the insulator layer and having a surface on which the source electrode and the drain electrode are formed.   
     
     
         20 . The method of manufacturing a transistor according to  claim 13 , comprising:
 forming the source electrode and the drain electrode; and   then forming an organic semiconductor layer that is in contact with surfaces of the source electrode and the drain electrode that face each other.   
     
     
         21 . The method of manufacturing a transistor according to  claim 19 , comprising, prior to forming the source electrode and the drain electrode:
 forming a resist layer having an opening corresponding to the source electrode and the drain electrode and capturing the metal on the surface of the base film formed on the surface exposed at least in the opening;   performing first electroless plating and then removing the resist layer; and   performing second electroless plating on the surface of an electrode formed by the first electroless plating to form the source electrode and the drain electrode,   wherein the energy level difference between the work function of a metal material used in the second electroless plating and the energy level of a molecular orbital used for electron transfer in a formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a metal material used in the first electroless plating and the energy level of the molecular orbital.   
     
     
         22 . The method of manufacturing a transistor according to  claim 11 ,
 wherein the substrate is made of a non-metallic material.   
     
     
         23 . The method of manufacturing a transistor according to  claim 22 ,
 wherein the substrate is made of a resin material.   
     
     
         24 . The method of manufacturing a transistor according to  claim 23 ,
 wherein the substrate has flexibility.   
     
     
         25 . A transistor, comprising:
 a source electrode and a drain electrode;   a gate electrode provided corresponding to a channel between the source electrode and the drain electrode;   a semiconductor layer provided in contact with the source electrode and the drain electrode; and   an insulator layer disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode,   wherein the insulator layer is formed by photocationic-polymerization of the composition according to  claim 1 .   
     
     
         26 . The transistor according to  claim 25 ,
 wherein at least one of the gate electrode, the source electrode, and the drain electrode is laminated on a base film containing a silane coupling agent having a group capable of capturing a metal, which is an electroless plating catalyst.   
     
     
         27 . The transistor according to  claim 25 ,
 wherein the semiconductor layer is an organic semiconductor layer.   
     
     
         28 . The transistor according to  claim 27 ,
 wherein the source electrode has a first electrode and a second electrode formed to cover the first electrode;   the drain electrode has a third electrode and a fourth electrode formed to cover the third electrode;   the energy level difference between the work function of a formation material of the second electrode and the energy level of a molecular orbital used for electron transfer in a formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a formation material of the first electrode and the energy level of the molecular orbital; and   the energy level difference between the work function of a formation material of the fourth electrode and the energy level of the molecular orbital used for electron transfer in the formation material of the organic semiconductor layer is smaller than the energy level difference between the work function of a formation material of the third electrode and the energy level of the molecular orbital.   
     
     
         29 . The transistor according to  claim 28 ,
 wherein the first electrode and the third electrode are made of the same material.   
     
     
         30 . The transistor according to  claim 28 ,
 wherein the second electrode and the fourth electrode are made of the same material.   
     
     
         31 . The transistor according to  claim 25 , which is formed on a substrate made of a non-metallic material. 
     
     
         32 . The transistor according to  claim 31 ,
 wherein the substrate is made of a resin material.   
     
     
         33 . The transistor according to  claim 32 ,
 wherein the substrate has flexibility.