Method of manufacture for a semiconductor device

Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor layer of a first conductivity type and forming a semiconductor layer of a second conductivity type thereon. The method also includes forming an insulator layer on the semiconductor layer of the second conductivity type, etching a trench into at least the semiconductor layer of the second conductivity type, and forming a thermal oxide layer in the trench and on the semiconductor layer of the second conductivity type. The method further includes implanting ions into the thermal oxide layer, forming a second insulator layer, removing the second insulator layer from a portion of the trench, and forming an oxide layer in the trench and on the epitaxial layer. Moreover, the method includes forming a material in the trench, forming a second gate oxide layer over the material, and patterning the second gate oxide layer.

1 - 20 . (canceled) 
     
     
         21 . A method of manufacturing a semiconductor device, the method comprising:
 providing a semiconductor layer of a first conductivity type;   forming a semiconductor layer of a second conductivity type on the semiconductor layer of the first conductivity type;   forming an insulator layer on the semiconductor layer of the second conductivity type;   etching a trench into at least the semiconductor layer of the second conductivity type;   forming a thermal oxide layer in the trench and on the semiconductor layer of the second conductivity type;   implanting ions into the thermal oxide layer;   forming a second insulator layer, thereby filling at least a portion of the trench;   removing the second insulator layer from a portion of the trench;   forming an oxide layer in the trench and on the epitaxial layer;   forming a material in the trench;   forming one or more device regions;   forming a third insulating layer over the material;   patterning the third insulating layer; and forming a source metal layer;   wherein the second insulator layer comprises a multilayer dielectric stack.   
     
     
         22 . The method of  claim 21  wherein the multilayer dielectric stack comprises:
 a layer of silicon oxide; 
 a layer of silicon nitride; and 
 a second layer of silicon oxide. 
 
     
     
         23 - 44 . (canceled) 
     
     
         45 . A method of manufacturing semiconductor device the method comprising:
 providing a semiconductor layer of a first conductivity type;   forming a semiconductor layer of a second conductivity type on the semiconductor layer of the first conductivity type;   forming an insulator layer on the semiconductor layer of the second conductivity type;   etching one or more trenches into at least the semiconductor layer of the second conductivity type;   forming a second insulator layer in the one or more trenches;   implanting ions into the second insulator layer;   forming a third insulator layer, thereby filling at least a portion of the one or more trenches;   etching an additional trench into at least the semiconductor layer of the second conductivity type;   forming a gate oxide layer in the additional trench;   forming a gate material in the additional trench;   forming one or more device regions; and   forming a source metal layer;   wherein the one or more trenches extend to the semiconductor layer of the first conductivity type.   
     
     
         46 . The method of  claim 45  wherein the second insulator layer comprises a thermal oxide layer. 
     
     
         47 . The method of  claim 45  wherein forming a third insulator layer completely fills the one or more trenches. 
     
     
         48 . The method of  claim 45  wherein the insulator layer comprises a multilayer dielectric stack. 
     
     
         49 . The method of  claim 48  wherein the multilayer dielectric stack comprises:
 a layer of silicon oxide; and 
 a layer of silicon nitride. 
 
     
     
         50 . A method of manufacturing a semiconductor device, the method comprising:
 providing a semiconductor layer of a first conductivity type;   forming a semiconductor layer of a second conductivity type on the semiconductor layer of the first conductivity type;   forming an insulator layer on the semiconductor layer of the second conductivity type;   etching a trench into at least the semiconductor layer of the second conductivity type;   forming an oxide layer in the trench and on the semiconductor layer of the second conductivity type;   implanting ions into the oxide layer;   forming a second insulator layer, thereby filling the trench;   forming one or more device regions; and   forming a metal layer;   wherein the trench extends to the semiconductor layer of the first conductivity type.   
     
     
         51 . (canceled) 
     
     
         52 . The method of  claim 50  wherein the ions comprise cesium ions. 
     
     
         53 . The method of  claim 52  further comprising: capping the second insulator layer; and performing a thermal treatment to anneal the cesium ions. 
     
     
         54 . The method of  claim 50  wherein the ions comprise iodine, bromine, chromium, aluminum, or chlorine ions. 
     
     
         55 . The method of  claim 54  further comprising:
 capping the second insulator layer; and 
 performing a thermal treatment to anneal the iodine, bromine, chromium, aluminum, or chlorine ions. 
 
     
     
         56 . The method of  claim 50  wherein the second insulator layer comprises a multilayer dielectric stack.