Semiconductor devices having through electrodes and methods of manufacturing the same

Abstract

Semiconductor devices are provided. The semiconductor device includes a semiconductor layer having a first surface and a second surface that are opposite each other, a through electrode penetrating the semiconductor layer and having a protrusion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed over the first surface of the semiconductor layer and electrically coupled to the through electrode, a polymer pattern disposed over the second surface of the semiconductor layer to enclose a part of the protrusion of the through electrode, and a back-side bump covering an upper surface and a sidewall of a remaining part of the protrusion of the through electrode and extending over a portion of the polymer pattern.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor layer having a first surface and a second surface that are opposite to each other;   a through electrode penetrating the semiconductor layer and having a protrusion that protrudes over the second surface of the semiconductor layer;   a front-side bump disposed over the first surface of the semiconductor layer and electrically coupled to the through electrode;   a polymer pattern disposed over the second surface of the semiconductor layer to enclose a part of the protrusion of the through electrode; and   a back-side bump covering an upper surface and a sidewall of a remaining part of the protrusion of the through electrode and extending over a portion of the polymer pattern.   
     
     
         2 . The semiconductor device of  claim 1 ,
 wherein the first surface of the semiconductor layer corresponds to a front-side surface adjacent to an active region disposed in the semiconductor layer; and   wherein the second surface of the semiconductor layer corresponds to a back-side surface that is opposite to the front-side surface.   
     
     
         3 . The semiconductor device of  claim 1 , wherein the through electrode includes a first end surface disposed at the same side of the semiconductor layer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the semiconductor layer as the second surface of the semiconductor layer. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the through electrode includes a copper material. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the polymer pattern encloses a sidewall of a lower portion of the protrusion of the through electrode and supports the protrusion of the through electrode. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the polymer pattern includes at least one selected from the group consisting of a benzocyclobutene (BCB) material, a polyimide material and a phenol-type polymer material. 
     
     
         7 . The semiconductor device of  claim 1 , further comprising an insulation layer disposed over the first surface of the semiconductor layer,
 wherein the insulation layer has an opening in which the front-side bump is disposed.   
     
     
         8 . The semiconductor device of  claim 7 , wherein the front-side bump includes a metal pillar filling the opening of the insulation layer and a solder bump disposed over a surface of the metal pillar opposite to the through electrode. 
     
     
         9 . The semiconductor device of  claim 1 , wherein a surface of the back-side bump opposite to the through electrode has a convex shape. 
     
     
         10 . The semiconductor device of  claim 1 ,
 wherein the through electrode includes a first end surface disposed at the same side of the semiconductor layer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the semiconductor layer as the second surface of the semiconductor layer, and   wherein the back-side bump contacts the second end surface of the through electrode, a sidewall of a upper portion of the protrusion of the through electrode, and a surface of the polymer pattern, the second end surface of the through electrode corresponding to the upper surface of the upper portion.   
     
     
         11 . The semiconductor device of  claim 1 ,
 wherein the through electrode includes a first end surface disposed at the same side of the semiconductor layer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the semiconductor layer as the second surface of the semiconductor layer; and   wherein the back-side bump includes:
 a seed metal pattern covering the second end surface of the through electrode and a sidewall of a upper portion of the protrusion of the through electrode and extending over the polymer pattern by a predetermined width, the second end surface of the through electrode corresponding to the upper surface of the upper portion; 
 a first metal layer over the seed metal pattern; 
 a second metal layer over the first metal layer; and 
 an adhesive metal layer over the second metal layer. 
   
     
     
         12 . The semiconductor device of  claim 11 , wherein each of the seed metal pattern, the first metal layer, the second metal layer and the adhesive metal layer sequentially stacked over the protrusion of the through electrode has a convex surface. 
     
     
         13 . The semiconductor device of  claim 1 ,
 wherein the polymer pattern has a first thickness at a first position adjacent to a sidewall of the protrusion of the through electrode;   wherein the polymer pattern has thicknesses that are gradually reduced at positions that are increasingly further from the sidewall of the protrusion of the through electrode, the positions being between the first position and a second position; and   wherein the polymer pattern has a second thickness smaller than the first thickness at the second position, the second position being further from the sidewall of the protrusion of the through electrode than the first position.   
     
     
         14 . The semiconductor device of  claim 1 , further comprising a gettering layer between the semiconductor layer and the polymer pattern. 
     
     
         15 . The semiconductor device of  claim 1 ,
 wherein the through electrode includes a first end surface disposed at the same side of the semiconductor layer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the semiconductor layer as the second surface of the semiconductor layer; and   wherein the back-side bump includes:
 a seed metal pattern covering the second end surface of the through electrode and a sidewall of a upper portion of the protrusion of the through electrode and extending over the polymer pattern by a predetermined width, the second end surface of the through electrode corresponding to the upper surface of the upper portion; and 
 a first metal layer, a second metal layer and an adhesive metal layer sequentially stacked over the seed metal pattern, 
 wherein the first metal layer is laterally recessed from a sidewall of the second metal layer so that undercuts are provided below edges of the second metal layer. 
   
     
     
         16 . A method of manufacturing a semiconductor device, the method comprising:
 providing a wafer having a through electrode and a front-side bump electrically coupled to the through electrode, the front-side bump being disposed over a first surface of the wafer;   recessing a second surface of the wafer opposite to the first surface so that one end of the through electrode protrudes from the recessed second surface of the wafer;   forming a polymer pattern over the recessed second surface of the wafer, the polymer pattern enclosing a lower portion of the protruding end of the through electrode; and   forming a back-side bump that covers an upper surface and a sidewall of an upper portion of the protruding end of the through electrode and extends over the polymer pattern.   
     
     
         17 . The method of  claim 16 ,
 wherein the first surface of the wafer corresponds to a front-side surface adjacent to an active region disposed in the wafer; and   wherein the second surface of the wafer corresponds to a back-side surface that is opposite to the front-side surface.   
     
     
         18 . The method of  claim 16 , wherein the through electrode includes a first end surface disposed at the same side of the wafer as the first surface of the wafer and a second end surface disposed at the same side of the wafer as the second surface of the wafer, the second end surface of the through electrode corresponding to the upper surface of the upper portion. 
     
     
         19 . The method of  claim 16 , wherein recessing the second surface of the wafer includes:
 performing a grinding process on the second surface of the wafer to remove a portion of the back side of the wafer; and   selectively etching the ground second surface of the wafer to recess the back side of the wafer below the protruding end of the through electrode.   
     
     
         20 . The method of  claim 19 , further comprising performing a grinding process on the etched second surface of the wafer and then forming a gettering layer on the second surface. 
     
     
         21 . The method of  claim 16 , wherein forming the polymer pattern includes:
 coating a polymer material over the recessed second surface of the wafer and the protruding end of the through electrode to form a polymer layer; and   supplying a developer onto the polymer layer; and   rinsing out the developer so that the upper portion of the protruding end of the through electrode is exposed.   
     
     
         22 . The method of  claim 21 ,
 wherein the polymer layer has a first thickness at a first position adjacent to a sidewall of the protruding end of the through electrode;   wherein the polymer layer has thicknesses that are gradually reduced at positions that are increasingly further from the sidewall of the protruding end of the through electrode, the positions being between the first position and a second position; and   wherein the polymer layer has a second thickness smaller than the first thickness at the second position, the second position being further from the sidewall of the through electrode than the first position.   
     
     
         23 . The method of  claim 16 , wherein the polymer pattern is formed of a polymer material which is capable of being cured at a temperature below about 200 degrees Celsius. 
     
     
         24 . The method of  claim 16 , wherein the polymer pattern is formed of at least one selected from the group consisting of a benzocyclobutene (BCB) material, a polyimide material and a phenol-type polymer material. 
     
     
         25 . The method of  claim 16 ,
 wherein the through electrode includes a first end surface disposed at the same side of the wafer as the first surface of the wafer and a second end surface disposed at the same side of the wafer as the second surface of the wafer; and   wherein the back-side bump contacts the second end surface of the through electrode, the sidewall of the upper portion of the protruding end of the through electrode, and a surface of the polymer pattern, the second end surface of the through electrode corresponding to the upper surface of the upper portion.   
     
     
         26 . The method of  claim 16 ,
 wherein the through electrode includes a first end surface disposed at the same side of the wafer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the wafer as the second surface of the semiconductor layer; and   wherein forming the back-side bump includes:
 forming a seed metal pattern that covers the second end surface of the through electrode and the sidewall of the upper portion of the protruding end of the through electrode and extends over the polymer pattern by a predetermined width, the second end surface of the through electrode corresponding to the upper surface of the upper portion; 
 forming a first metal layer over the seed metal pattern; 
 forming a second metal layer over the first metal layer; and 
 forming an adhesive metal layer over the second metal layer. 
   
     
     
         27 . The method of  claim 16 ,
 wherein the through electrode includes a first end surface disposed at the same side of the wafer as the first surface of the semiconductor layer and a second end surface disposed at the same side of the wafer as the second surface of the semiconductor layer; and   wherein forming the back-side bump includes:
 forming a seed metal pattern that covers the second end surface of the through electrode and the sidewall of the upper portion of the protruding end of the through electrode and extends over the polymer pattern by a predetermined width, the second end surface of the through electrode corresponding to the upper surface of the upper portion; 
 sequentially forming a first metal layer, a second metal layer and an adhesive metal layer over the seed metal pattern, 
 wherein the first metal layer is laterally recessed from a sidewall of the second metal layer so that an undercut is provided below edges of the second metal layer.