Interconnect structure and method for fabricating on-chip interconnect structures by image reversal

Abstract

An interconnect structure includes a patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating. The patterned and cured dielectric layer and the permanent antireflective coating form shaped openings. The shaped openings include an inverse profile which narrows towards a top of the shaped openings. A conductive structure fills the shaped openings wherein the patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.

What is claimed is: 
     
         1 . An interconnect structure, comprising:
 at least one patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating, the at least one patterned and cured dielectric layer and the permanent antireflective coating forming shaped openings, the shaped openings including an inverse profile which narrows towards a top of the shaped openings; and   a conductive structure filling the shaped openings wherein the at least one patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.   
     
     
         2 . The interconnect structure as recited in  claim 1 , wherein the at least one patterned and cured dielectric layer is a patterned and cured product of a dielectric composition comprising a polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers. 
     
     
         3 . The interconnect structure as recited in  claim 2 , wherein the dielectric composition comprises a polymer, a copolymer, or a blend including at least two of any combination of polymers and/or copolymers, wherein said polymers include one monomer and the copolymers include at least two monomers and wherein the monomers of the polymers and the monomers of the copolymers are selected from a siloxane, silane, carbosilane, oxycarbosilane, silsesquioxane, alkyltrialkoxysilane, tetra-alkoxysilane, unsaturated alkyl substituted silsesquioxane, unsaturated alkyl substituted siloxane, unsaturated alkyl substituted silane, an unsaturated alkyl substituted carbosilane, unsaturated alkyl substituted oxycarbosilane, carbosilane substituted silsesquioxane, carbosilane substituted siloxane, carbosilane substituted silane, carbosilane substituted carbosilane, carbosilane substituted oxycarbosilane, oxycarbosilane substituted silsesquioxane, oxycarbosilane substituted siloxane, oxycarbosilane substituted silane, oxycarbosilane substituted carbosilane, and oxycarbosilane substituted oxycarbosilane. 
     
     
         4 . The interconnect structure as recited in  claim 1 , wherein the permanent antireflective coating comprises atoms of M, carbon (C) and hydrogen (H) wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. 
     
     
         5 . The interconnect structure as recited in  claim 1 , wherein the conductive structures include a trapezoidal cross-section. 
     
     
         6 . The interconnect structure as recited in  claim 1 , wherein the conductive structures include a plurality of conductive structures and further comprising air gaps formed between the plurality of conductive structures. 
     
     
         7 . The interconnect structure as recited in  claim 1 , wherein the conductive structure includes one of a single damascene structure and a dual damascene structure.