US2015255453A1PendingUtilityA1
Semiconductor device
Est. expiryJun 25, 2033(~6.9 yrs left)· nominal 20-yr term from priority
Inventors:Kentaro Ikeda
H10W 72/5524H10W 72/5522H10W 74/00H10W 72/884H10W 90/753H10W 72/536H10W 90/756H10W 90/759H10W 72/926H10W 90/736H10W 72/5525H10W 70/481H10W 70/461H10W 70/421H10W 90/811H10W 90/00H10W 70/442H10W 70/40H10W 70/20H10W 42/80H10D 8/60H10D 8/25H10D 84/811H10D 30/475H10D 84/83H10D 84/80H01L 27/0629H01L 29/872H01L 29/7786H01L 29/866H01L 23/492H10W 72/851H10P 95/90
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Claims
Abstract
A semiconductor device according to one embodiment is provided with a first metal substrate, a second metal substrate separated from the first metal substrate, a normally-off transistor of a silicon semiconductor provided on the first metal substrate, and a normally-on transistor of a nitride semiconductor provided on the second metal substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor device comprising:
a first metal substrate; a second metal substrate separated from the first metal substrate; a normally-off transistor formed of silicon semiconductor and provided on the first metal substrate; and a normally-on transistor formed of nitride semiconductor and provided on the second metal substrate.
2 . The device according to claim 1 , further comprising a diode provided on the first metal substrate.
3 . The device according to claim 2 , wherein
a distance between the diode and the normally-on transistor is longer than a distance between the normally-off transistor and the normally-on transistor.
4 . The device according to claim 2 , wherein
the diode is a zener diode.
5 . The device according to claim 2 , wherein
the diode is a schottky-barrier diode.Join the waitlist — get patent alerts
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