Resistive random access memory devices with extremely reactive contacts

Abstract

A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode.

What is claimed is: 
     
         1 . A method for forming a resistive switching device, comprising:
 forming a first electrode;   forming a transition metal oxide layer on the first electrode;   forming an oxygen scavenging electrode on the transition metal oxide; and   controlling oxygen scavenging by the oxygen scavenging electrode by adjusting formation properties of the oxygen scavenging electrode such that when the device is biased, the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode.   
     
     
         2 . The method as recited in  claim 1 , wherein the oxygen scavenging electrode includes erbium. 
     
     
         3 . The method as recited in  claim 1 , wherein controlling oxygen scavenging includes adjusting a thickness of the oxygen scavenging electrode. 
     
     
         4 . The method as recited in  claim 3 , wherein the oxygen scavenging electrode has its thickness adjusted between about 1 nm and about 100 nm. 
     
     
         5 . The method as recited in  claim 1 , wherein the device forms a resistive random access memory cell. 
     
     
         6 . The method as recited in  claim 1 , wherein controlling oxygen scavenging includes annealing the oxygen scavenging layer to drive off oxygen. 
     
     
         7 . The method as recited in  claim 1 , wherein controlling oxygen scavenging includes adjusting one of formation temperature and formation pressure of the oxygen scavenging electrode.