Method of manufacturing microarray type nitride light emitting device

Abstract

A method of manufacturing a microarray type nitride light emitting device includes forming a light emitting semiconductor layer by sequentially laminating a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer on a substrate, forming a first transparent contact layer on the formed light emitting semiconductor layer, dividing a microarray type light emitting region through heat treatment of the first transparent contact layer through formation of a pattern, and connecting the divided light emitting regions by a second transparent contact layer.

What is claimed is: 
     
         1 . A method of manufacturing a microarray type nitride light emitting device, comprising:
 a light emitting semiconductor layer forming step of forming a light emitting semiconductor layer by sequentially laminating a buffer layer, an n-type nitride contact layer, an active layer, and a p-type nitride contact layer on a substrate;   a first contact layer forming step of forming a first transparent contact layer on the formed light emitting semiconductor layer;   a light emitting region dividing step of dividing a microarray type light emitting region through heat treatment of the first transparent contact layer through formation of a pattern; and   a second contact layer forming step of connecting the divided light emitting regions by a second transparent contact layer.   
     
     
         2 . The method of manufacturing a microarray type nitride light emitting device of  claim 1 , wherein the light emitting region dividing step includes:
 a pattern forming step of forming a pattern forming layer to classify the microarray type light emitting regions on the formed first transparent contact layer;   a heat treatment step of heat treating the first transparent contact layer including the pattern forming layer formed thereon; and   a pattern forming layer etching step of etching the formed pattern forming layer.   
     
     
         3 . The method of manufacturing a microarray type nitride light emitting device of  claim 2 , wherein the heat treatment step is performed so that the first transparent contact layer is heat treated in an oxygen (O 2 ) atmosphere at a heat treatment temperature of 300 to 600° C. for a heat treatment time of 1 to 60 min. 
     
     
         4 . The method of manufacturing a microarray type nitride light emitting device of  claim 1 , wherein the first contact layer forming step is performed by using an IZO (indium zinc oxide) or ZnO (zinc oxide)-based transparent conducting oxide having a resistance value changed by the heat treatment. 
     
     
         5 . The method of manufacturing a microarray type nitride light emitting device of  claim 1 , wherein the second contact layer forming step is performed by using any one of ITO (indium tin oxide), IZO, and ZnO-based transparent conducting oxides. 
     
     
         6 . The method of manufacturing a microarray type nitride light emitting device of  claim 1 , wherein in the case of a horizontal type light emitting device, the microarray type light emitting region is formed on a p-type contact layer during the light emitting region dividing step. 
     
     
         7 . The method of manufacturing a microarray type nitride light emitting device of  claim 1 , wherein in the case of a vertical type light emitting device, the microarray type light emitting region is formed on an n-type contact layer or u-GaN layer during the light emitting region dividing step.