Wiring structure and electronic device employing the same

Abstract

Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

What is claimed is: 
     
         1 . A wiring structure comprising:
 a first conductive material layer; and   a nanocrystalline graphene layer on the first conductive material layer.   
     
     
         2 . The wiring structure of  claim 1 , wherein the nanocrystalline graphene layer has at least one of a thickness of less than 20% of a thickness of the first conductive material layer, a ratio of 2D/G of a Raman spectrum which is equal to or greater than 0.05, a ratio of D/G that is equal to or less than 2, and a crystal size equal to or greater than 1 nm. 
     
     
         3 . The wiring structure of  claim 1 , wherein the nanocrystalline graphene layer has a crystal size of about 1 nm to about 100 nm. 
     
     
         4 . The wiring structure of  claim 1 , wherein the nanocrystalline graphene layer is formed on the first conductive material layer by deposition. 
     
     
         5 . The wiring structure of  claim 1 , wherein the nanocrystalline graphene layer is doped with a doping element. 
     
     
         6 . The wiring structure of  claim 5 , wherein the doping element comprises an organic p-dopant group including at least one of NO 2 BF 4 , NOBF 4 , NO 2 SbF 6 , HCl, H 2 PO 4 , CH 3 COOH, H 2 SO 4 , HNO 3 , dichlorodicyanoquinone, oxon, dimyristoylphosphatidylinositol, and trifluoromethanesulfonic imide; an inorganic p-dopant group constituted by HPtCl 4 , AuCl 3 , HAuCl 4 , AgOTfs, AgNO 3 , H 2 PdCl 6  Pd(OAc) 2 , and Cu(CN) 2 ; an organic n-dopant group constituted by a reduced substance of substituted or unsubstituted nicotinamide, a reduced substance of a compound chemically bonded to substituted or unsubstituted nicotinamide, and a compound containing two or more pyridinum derivatives in a molecular structure and containing a reduced nitrogen within a ring of at least one pyridinum derivative; DDQ; and BV. 
     
     
         7 . The wiring structure of  claim 1 , wherein the first conductive material layer has a single-layered structure or a multi-layered structure including a material including at least a transition metal containing Ni, Cu, Co, Fe, or Ru, at least one of TiN, W, NiSi, CoSi, CuSi, FeSi, MnSi, RuSi, RhSi, IrSi, PtSi, TiSi, TiSiN, and WSi, or an alloy thereof, or Poly-Si. 
     
     
         8 . The wiring structure of  claim 1 , wherein the nanocrystalline graphene layer is on the first conductive material layer in direct contact with the first conductive material layer. 
     
     
         9 . The wiring structure of  claim 8 , wherein the first conductive material layer is a metal layer. 
     
     
         10 . The wiring structure of  claim 1 , further comprising a seed layer on the first conductive material layer,
 wherein the nanocrystalline graphene layer is directly grown on the seed layer.   
     
     
         11 . The wiring structure of  claim 10 , wherein the seed layer is a metal-carbon bonding layer. 
     
     
         12 . The wiring structure of  claim 11 , wherein the seed layer has a thickness equal to or less than 1 nm. 
     
     
         13 . The wiring structure of  claim 10 , further comprising a second conductive material layer on the nanocrystalline graphene layer. 
     
     
         14 . The wiring structure of  claim 13 , further comprising a graphene layer onto the nanocrystalline graphene layer. 
     
     
         15 . The wiring structure of  claim 13 , wherein the first conductive material layer comprises a Poly-Si layer and a metal layer, and the second conductive material layer includes a metallic material. 
     
     
         16 . The wiring structure of  claim 15 , wherein the metal layer comprises TiN or TiSiN, the second conductive material layer includes W, and the seed layer includes Ti—C. 
     
     
         17 . The wiring structure of  claim 13 , wherein the first conductive material layer comprises a Poly-Si layer, and the second conductive material layer includes a metallic material. 
     
     
         18 . The wiring structure of  claim 17 , wherein the second conductive material layer comprises W, and the seed layer includes Si—C. 
     
     
         19 . The wiring structure of  claim 10 , wherein the first conductive material layer comprises a single layer or a multi-layer including a material including a transition metal containing Ni, Cu, Co, Fe, or Ru, at least one of TiN, W, NiSi, CoSi, CuSi, FeSi, MnSi, RuSi, RhSi, IrSi, PtSi, TiSi, TiSiN, and WSi, an alloy thereof, or Poly-Si. 
     
     
         20 . A wiring structure comprising:
 a conductive material layer;   a nanocrystalline graphene layer on the conductive material layer in direct contact with the conductive material; and   a graphene layer formed on the nanocrystalline graphene layer.   
     
     
         21 . The wiring structure of  claim 20 , wherein the nanocrystalline graphene layer satisfies at least one of a thickness of less than 20% of a thickness of the conductive material layer, a ratio of 2D/G of a Raman spectrum which is equal to or greater than 0.05, a ratio of D/G that is equal to or less than 2, and a crystal size equal to or greater than 1 nm. 
     
     
         22 . The wiring structure of  claim 20 , wherein the nanocrystalline graphene layer is formed on the conductive material layer by deposition. 
     
     
         23 . The wiring structure of  claim 20 , wherein the nanocrystalline graphene layer is formed after removing a natural oxide film on the conductive material layer. 
     
     
         24 . The wiring structure of  claim 23 , wherein the natural oxide film is removed by reduction. 
     
     
         25 . The wiring structure of  claim 20 , wherein the graphene layer is formed by transferring separately grown graphene. 
     
     
         26 . The wiring structure of  claim 20 , wherein the graphene layer is configured as single-layered to thirty-layered graphene. 
     
     
         27 . The wiring structure of  claim 20 , wherein the graphene layer has a thickness equal to or less than about 10 nm. 
     
     
         28 . The wiring structure of  claim 20 , wherein at least one of the graphene layer and the nanocrystalline graphene layer is doped with a doping element. 
     
     
         29 . The wiring structure of  claim 28 , wherein the doping element comprises an organic p-dopant group including at least one of NO 2 BF 4 , NOBF 4 , NO 2 SbF 6 , HCl, H 2 PO 4 , CH 3 COOH, H 2 SO 4 , HNO 3 , dichlorodicyanoquinone, oxon, dimyristoylphosphatidylinositol, and trifluoromethanesulfonic imide; an inorganic p-dopant group constituted by HPtCl 4 , AuCl 3 , HAuCl 4 , AgOTfs, AgNO 3 , H 2 PdCl 6  Pd(OAc) 2 , and Cu(CN) 2 ; an organic n-dopant group constituted by a reduced substance of substituted or unsubstituted nicotinamide, a reduced substance of a compound chemically bonded to substituted or unsubstituted nicotinamide, and a compound containing two or more pyridinum derivatives in a molecular structure and containing a reduced nitrogen within a ring of at least one pyridinum derivative; DDQ; and BV. 
     
     
         30 . The wiring structure of  claim 20 , wherein the conductive material layer has a single-layered structure or a multi-layered structure including a material including a transition metal containing Ni, Cu, Co, Fe, or Ru, at least one of TiN, W, NiSi, CoSi, CuSi, FeSi, MnSi, RuSi, RhSi, IrSi, PtSi, TiSi, TiSiN, and WSi, or an alloy thereof, or Poly-Si. 
     
     
         31 . An electronic device comprising the wiring structure of  claim 1 . 
     
     
         32 . The electronic device of  claim 31 , further comprising a plurality of elements,
 wherein each of the plurality of elements includes at least one of a transistor, a capacitor, and a resistor, and   wherein the wiring structure is configured to connect the plurality of elements or to connect within at least one of the elements.   
     
     
         33 . The electronic device of  claim 32 , wherein the wiring structure is configured to connect unit cells each constituted by a combination of the plurality of elements. 
     
     
         34 . The electronic device of  claim 33 , wherein the wiring structure is configured to connect chips each constituted by the unit cells. 
     
     
         35 . The electronic device of  claim 31 , further comprising a plurality of elements,
 wherein each of the plurality of elements includes at least one of a transistor, a capacitor, and a resistor, and   wherein the wiring structure is configured to connect unit cells each constituted by a combination of the plurality of elements.   
     
     
         36 . The electronic device of  claim 31 , further comprising a plurality of elements,
 wherein each of the plurality of elements includes at least one of a transistor, a capacitor, and a resistor, and   wherein the wiring structure is configured to connect unit cells each constituted by a combination of the plurality of elements.