Display device and method for manufacturing display device

Abstract

A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

The invention is claimed as follows: 
     
         1 . An organic electroluminescence display device comprising a first pixel and a second pixel,
 wherein a first pixel and a second pixel adjacent to the first pixel are arranged symmetrically with respect to a first direction,   wherein each of the first pixel and the second pixel has a thin film transistor including a channel region irradiated with laser light,   wherein a distance between the thin film transistor of the first pixel and the thin film transistor of the second pixel are lower than a distance between a center of the first pixel and a center of the second pixel,   wherein said thin film transistor of the first pixel and said thin film transistor of the second pixel are formed through irradiation with the same laser light, and   wherein laser light is moved for scanning in the first direction.   
     
     
         2 . The organic electroluminescence display device according to  claim 1 , wherein for each of the thin film transistors, the gate electrode is formed on an insulating substrate. 
     
     
         3 . The organic electroluminescence display device according to  claim 2 , wherein for each of the pixels, the gate wiring is electrically connected to the gate electrode. 
     
     
         4 . The organic electroluminescence display device according to  claim 3 , wherein for each of the thin film transistors, a gate insulating layer is formed on the gate electrode, and a Si layer is provided on the gate insulating layer, and wherein a portion of the thin film transistors that are crystallized includes the Si layer. 
     
     
         5 . The organic electroluminescence display device according to  claim 4 , wherein the gate electrode is composed of a material having a thermal conductivity higher than that of both the Si layer and the gate insulating layer. 
     
     
         6 . The organic electroluminescence display device according to  claim 5 , wherein during the laser irradiation of the unit pixels, for each of the unit pixel, the gate electrode becomes thermally saturated to become in a pre-annealed state before the laser reaches the channel region of the respective thin film transistor. 
     
     
         7 . The organic electroluminescence display device according to  claim 4 , wherein an amorphous Si layer is formed on the Si layer after the Si layer has been crystallized, an etching stop layer is formed on a portion of the amorphous Si layer, and an n+amorphous Si layer is formed on the etching stop layer and portions of the amorphous Si layer. 
     
     
         8 . The organic electroluminescence display device according to  claim 7 , wherein first, second, and third metal layers are formed over the n+amorphous Si layer to form a source electrode and a drain electrode of the thin film transistor.