Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

Abstract

A semiconductor body may include impurities. The impurities may act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body.

What is claimed is: 
     
         1 . A semiconductor component comprising:
 a semiconductor body having a front surface and an opposite rear surface;   a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centers, and wherein a surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone.   
     
     
         2 . The semiconductor component according to  claim 1 , wherein the surface state density is less than 2*10 11  cm 2 . 
     
     
         3 . The semiconductor component according to  claim 2 , further comprising a non-semiconductor layer is applied at the front or rear surface of the semiconductor body and the recombination zone is at a distance from the front or rear surface with the non-semiconductor layer. 
     
     
         4 . The semiconductor component according to  claim 3 , wherein the non-semiconductor layer is a gate oxide arranged between the semiconductor body and a gate electrode. 
     
     
         5 . The semiconductor component according to  claim 1 , wherein the impurities are introduced into the semiconductor body in a locally delimited manner. 
     
     
         6 . The semiconductor component according to  claim 1 , wherein the impurities are introduced into the semiconductor body at a distance from the front and rear surfaces of the semiconductor body. 
     
     
         7 . The semiconductor component according to  claim 1 , wherein the impurities include at least a heavy metal. 
     
     
         8 . The semiconductor component according to  claim 8 , wherein the heavy metal comprises tungsten or tantalum. 
     
     
         9 . The semiconductor component according to  claim 1 , futher comprising a semiconductor body portion on the semiconductor body, the semiconductor body portion eppitaxially produced. 
     
     
         10 . The semiconductor component according to  claim 9 , wherein the semiconductor body portion is provided on the semiconductor body subsequent to providing the recombination zone. 
     
     
         11 . The semiconductor component according to  claim 9 , wherein the semiconductor body portion includes impurities diffused from the recombination zone. 
     
     
         12 . A semiconductor component, comprising:
 a semiconductor body having a first surface and a second surface;   a recombination zone formed by impurities between the first and second surfaces, a surface state density at or near the first and second surfaces of the semiconductor body is approximately the same as the surface state density at or near a surface of an identical semiconductor body without a recombination zone.   
     
     
         13 . The semiconductor component according to  claim 12 , wherein the surface state density is less than 2*10 11  cm −2 . 
     
     
         14 . The semiconductor component according to  claim 12 , further comprising a non-semiconductor layer is applied at the first or second surface of the semiconductor body and the recombination zone is at a distance from the first or second surface with the non-semiconductor layer. 
     
     
         15 . The semiconductor component according to  claim 14 , wherein the non-semiconductor layer is a gate oxide arranged between the semiconductor body and a gate electrode. 
     
     
         16 . The semiconductor component according to  claim 12 , wherein the impurities are introduced into the semiconductor body in a locally delimited manner. 
     
     
         17 . The semiconductor component according to  claim 12 , wherein the impurities include at least a heavy metal. 
     
     
         18 . The semiconductor component according to  claim 17 , wherein the heavy metal comprises tungsten or tantalum. 
     
     
         19 . The semiconductor component according to  claim 12 , futher comprising a semiconductor body portion on the semiconductor body, the semiconductor body portion eppitaxially produced. 
     
     
         20 . The semiconductor component according to  claim 19 , wherein the semiconductor body portion is provided on the semiconductor body subsequent to providing the recombination zone. 
     
     
         21 . The semiconductor component according to  claim 19 , wherein the semiconductor body portion includes impurities diffused from the recombination zone.