US2015228633A1PendingUtilityA1

Front facing piggyback wafer assembly

Assignee: INVENSAS CORPPriority: Nov 18, 2011Filed: Dec 15, 2014Published: Aug 13, 2015
Est. expiryNov 18, 2031(~5.3 yrs left)· nominal 20-yr term from priority
F21Y 2115/10F21K 9/23H10W 70/099H10W 72/073H10W 72/0198H10W 72/874H10W 72/944H10W 72/953H10W 72/9415H10W 72/07331H10W 72/353H10W 90/00H10W 70/6523H10W 90/734H10P 72/7426H10P 72/74H10P 54/00H10H 20/018H10H 20/8583H10H 20/857H01L 33/62H01L 25/162H01L 33/644H01L 25/167Y02B20/40
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Claims

Abstract

Front facing piggyback wafer assembly. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. The plurality of integrated circuit devices are singulated to form individual integrated circuit devices. The carrier wafer may be processed to form integrated circuit structures prior to the attaching.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus comprising:
 a first wafer substrate attached to a second dissimilar wafer substrate;   a semiconducting device formed on said second wafer substrate; and   a plurality of conductive structures coupling said semiconducting device to contacts on said first wafer substrate.   
     
     
         2 . The apparatus of  claim 1  wherein said plurality of conductive structures comprise vias through said first wafer substrate. 
     
     
         3 . The apparatus of  claim 1  wherein said contacts on said first wafer substrate comprise package contacts for electrical coupling to a printed circuit board. 
     
     
         4 . The apparatus of  claim 1  wherein said first wafer substrate comprises Silicon. 
     
     
         5 . The apparatus of  claim 1  wherein said first wafer substrate comprises is transparent to ultra-violet light and suitable for bonding to sapphire. 
     
     
         6 . The apparatus of  claim 1  wherein said second wafer substrate comprises sapphire. 
     
     
         7 . The apparatus of  claim 1  wherein said first wafer substrate comprises a plurality of integrated circuits formed thereon. 
     
     
         8 . The apparatus of  claim 1  wherein said first wafer substrate is configured to conduct heat energy away from said semiconducting device formed on said second wafer substrate. 
     
     
         9 . The apparatus of  claim 1  wherein said semiconducting device comprises radio frequency circuitry. 
     
     
         10 . The apparatus of  claim 1  where said semiconductor device comprises a light emitting diode. 
     
     
         11 . The apparatus of  claim 10  further comprising:
 a base for coupling to an alternating current supply; and 
 electronics configured to convert said alternating current to electrical power suitable for driving said light emitting diode. 
 
     
     
         12 . The apparatus of  claim 10  further comprising:
 a processor for operating a graphical user interface; 
 a display for displaying said graphical user interface; and 
 wherein said light emitting diode is configured to illuminate said display.

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