Electronic fuse with resistive heater

Abstract

An electronic fuse structure including an M x level having a first M x metal, and a second M x metal, and an M x+1 level having a first M x+1 metal, a second M x+1 metal, a first via, a second via, and a conductive path extending from the first via to the second via and partially encircling the first via, the first via extending vertically and electrically connecting the first M x metal to the first M x+1 metal, and the second via extending vertically and electrically connecting the second M x metal to the second M x+1 metal.

What is claimed is: 
     
         1 . An electronic fuse structure, the structure comprising:
 an M x  level comprising a first M x  metal, and a second M x  metal; and   an M x+1  level comprising a first M x+1  metal, a second M x+1  metal, a first via, a second via, and a conductive path extending from the first via to the second via and partially encircling the first via, the first via extending vertically and electrically connecting the first M x  metal to the first M x+1  metal, and the second via extending vertically and electrically connecting the second M x  metal to the second M x+1  metal.   
     
     
         2 . The structure of  claim 1 , wherein the conductive path is within a distance ranging from about 100 nm to about 300 nm of the first via. 
     
     
         3 . The structure of  claim 1 , wherein the conductive path comprises a width ranging from about 20 nm to about 40 nm. 
     
     
         4 . The structure of  claim 1 , wherein the conductive path comprises a thickness ranging from about 2 nm to about 5 nm. 
     
     
         5 . The structure of  claim 1 , wherein the conductive path is positioned about in the middle of the M x+1  level and is bounded on top and bottom by an M x+1  dielectric. 
     
     
         6 . The structure of  claim 1 , wherein the conductive path comprises a metal having a different etch rate than the first M x+1  dielectric under the same etch conditions. 
     
     
         7 . The structure of  claim 1 , wherein the first via or the second via comprises a width ranging from about 10 nm to about 40 nm. 
     
     
         8 . The structure of  claim 1 , further comprising:
 a damaged region.   
     
     
         9 . The structure of  claim 1 , further comprising:
 an undercut feature; and   an M x+1  liner comprising small voids.   
     
     
         10 . The structure of  claim 1 , further comprising:
 a void located in the first via preventing electrons from flowing from the second M x  metal to the first M x+1  metal.   
     
     
         11 . The structure of  claim 1 , further comprising:
 a void located in the second via preventing electrons from flowing from the first M x  metal to the second M x+1  metal.