Semiconductor device and method of manufacturing the same

Abstract

To enhance the reliability of connection between a semiconductor chip and a metal plate by ensuring sufficiently the thickness of a conductive material interposed between the semiconductor chip and the metal plate. A lead frame is arranged over a jig and a clip frame is arranged over protruding portions provided on the jig. In this state, a heating process (reflow) is performed. In this case, high melting point solders filling first spaces are melted in a state in which the first space is formed between a High-MOS chip and a High-MOS clip and the first space is formed between a Low-MOS chip and a Low-MOS clip. At this time, even when the high melting point solder is melted in the first space, the size (in particular, the height) of the first space does not change and the first space is maintained.

1 - 17 . (canceled) 
     
     
         18 . A semiconductor device comprising:
 (a) a chip mounting portion including a first upper surface and a first lower surface opposite to the first upper surface;   (b) a semiconductor chip which is mounted over the first upper surface of the chip mounting portion and which includes a surface where an electrode pad is formed;   (c) a lead which is electrically coupled to the electrode pad of the semiconductor chip;   (d) a metal plate that electrically couples the electrode pad of the semiconductor chip and the lead; and   (e) a sealing body which has a quadrangular shape as seen in a plan view, which includes a second upper surface, a second lower surface opposite to the second upper surface, and a plurality of side surfaces arranged between the second upper surface and the second lower surface, and which seals a part of the chip mounting portion, the semiconductor chip, a part of the lead, and a part of the metal plate,   wherein the metal plate includes a first portion electrically coupled to the electrode pad of the semiconductor chip, a second portion electrically coupled to the lead, a third portion connecting the first portion and the second portion, and a fourth portion which is coupled to the third portion and whose end portion extends to an outer edge of the sealing body as seen in a plan view, and   wherein an end face of the fourth portion of the metal plate is exposed from a first side surface of the side surfaces of the sealing body, and the end face of the fourth portion and the first side surface of the sealing body form the same plane.   
     
     
         19 . The semiconductor device according to  claim 18 ,
 wherein the sealing body includes a second side surface facing the first side surface,   wherein the metal plate includes a fifth portion which is coupled to the third portion and whose end portion extends to an outer edge of the sealing body as seen in a plan view, and   wherein an end face of the fifth portion of the metal plate is exposed from the second side surface of the sealing body and the end face of the fifth portion and the second side surface of the sealing body form the same plane.   
     
     
         20 . The semiconductor device according to  claim 18 ,
 wherein the sealing body includes a third side surface perpendicular to the first side surface,   wherein the metal plate includes a fifth portion which is connected to the third portion and whose end portion extends to an outer edge of the sealing body as seen in a plan view, and   wherein an end face of the fifth portion of the metal plate is exposed from the third side surface of the sealing body and the end face of the fifth portion and the third side surface of the sealing body form the same plane.