Semiconductor light emitting device

Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

What is claimed is: 
     
         1 . A semiconductor light emitting device, comprising:
 a first semiconductor layer having a first surface and a second surface opposite to the first surface, the second surface having a p-side region and a plurality of n-side regions;   a light emitting layer provided on the p-side region;   a second semiconductor layer provided on the light emitting layer;   a p-side electrode provided on the second semiconductor layer;   a plurality of n-side electrodes provided respectively on the plurality of n-side regions;   a first insulating film provided on the p-side electrode and on the n-side electrodes;   a p-side interconnect unit provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film; and   an n-side interconnect unit provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a plurality of second vias,   wherein the plurality of n-side regions are separated from each other without being linked at the second surface, and at least one of the plurality of n-side regions are not surrounded with the p-side region.   
     
     
         2 . The device according to  claim 1 , wherein the p-side electrode is reflective to light emitted by the light emitting layer. 
     
     
         3 . The device according to  claim 1 , wherein the plurality of n-side regions include:
 a first region provided around the p-side region; and   a second region surrounded with the p-side region.   
     
     
         4 . The device according to  claim 1 , wherein the p-side interconnect unit includes a first unit and a second unit, the n-side interconnect unit is provided between the first unit and the second unit. 
     
     
         5 . The device according to  claim 1 , further comprising a transparent electrode provided on the second semiconductor layer. 
     
     
         6 . The device according to  claim 1 , wherein the n-side electrode is reflective to light emitted by the light emitting layer. 
     
     
         7 . The device according to  claim 1 , wherein
 the p-side interconnect unit includes:
 a p-side interconnect layer provided on the first insulating film; and 
 a p-type metal pillar provided on the p-side interconnect layer, the p-type metal pillar being thicker than the p-side interconnect layer, and 
   the n-side interconnect unit includes:
 an n-side interconnect layer provided on the first insulating film; and 
 an n-side metal pillar provided on the n-side interconnect layer, the n-side metal pillar being thicker than the n-side interconnect layer. 
   
     
     
         8 . The device according to  claim 7 , wherein the p-side interconnect layer comprises a first single-layer structure provided on the first insulating film, and the n-side interconnect layer comprises a second single-layer structure provided on the first insulating film. 
     
     
         9 . The device according to  claim 1 , further comprising a second insulating film provided between the p-side interconnect unit and the n-side interconnect unit. 
     
     
         10 . The device according to  claim 9 , wherein the second insulating film continuously covers a periphery of the p-side interconnect unit and a periphery of the n-side interconnect unit. 
     
     
         11 . The device according to  claim 1 , wherein the plurality of n-side electrodes are interspersed in a dot configuration on the second surface. 
     
     
         12 . The device according to  claim 1 , wherein the p-side electrode includes silver. 
     
     
         13 . The device according to  claim 1 , wherein a distance between the light emitting layer and the p-side electrode is ½ of a light emission wavelength of the light emitting layer.