Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

1 - 20 . (canceled) 
     
     
         21 . A method for manufacturing a semiconductor light emitting device, comprising:
 forming a reflecting electrode including Ag on a second semiconductor layer of a stacked body, the stacked body including a first semiconductor layer of a first conductivity type, a light emitting unit provided on the first semiconductor layer, and the second semiconductor layer of a second conductivity type provided on the light emitting unit;   forming an oxide layer on the reflecting electrode;   performing a heat treatment of a processing body including the stacked body, the reflecting electrode, and the oxide layer in an atmosphere including oxygen; and   forming a nitrogen-containing layer on the oxide layer after performing the heat treatment.   
     
     
         22 . The method according to  claim 21 , further comprising performing a pre-heat treatment on the processing body at reduced pressure or in a nitrogen atmosphere prior to the heat treatment in the atmosphere including oxygen. 
     
     
         23 . The method according to  claim 21 , further comprising making an opening in the oxide layer and the nitrogen-containing layer to communicate with the reflecting electrode. 
     
     
         24 . The method according to  claim 23 , wherein:
 the oxide layer includes an oxide of at least one selected from Si, Ge, Ti, Zr, Hf, Ce, Y, and La; and   a surface area of a first portion of the reflecting electrode is less than a surface area of a second portion of the reflecting electrode, the first portion of the reflecting electrode overlaps the opening of the oxide layer and the opening of the nitrogen-containing layer in a first direction from the oxide layer toward the nitrogen-containing layer, and the second portion of the reflecting electrode overlaps the oxide layer in the first direction.   
     
     
         25 . The method according to  claim 23 , wherein the nitrogen-containing layer includes a nitride or an oxynitride of at least one selected from Si, Ge, Ti, Zr, Hf, and Ce. 
     
     
         26 . The method according to  claim 21 , wherein the oxide layer includes an oxide of at least one selected from In, Zn, and Sn. 
     
     
         27 . The method according to  claim 21 , wherein the nitrogen-containing layer includes an oxynitride of at least one selected from In, Zn, and Sn. 
     
     
         28 . The method according to  claim 21 , wherein the oxide layer includes an oxide of at least one selected from Si, Ge, Ti, Zr, Hf, and Ce. 
     
     
         29 . The method according to  claim 21 , wherein the nitrogen-containing layer includes an oxynitride of at least one selected from Si, Ge, Ti, Zr, Hf, and Ce.