US2015214418A1PendingUtilityA1
Composition for forming p-type diffusion layer, method of forming p-type diffusion layer, and method of producing photovoltaic cell
Est. expiryApr 23, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Yoichi MachiiMasato YoshidaTakeshi NojiriKaoru OkaniwaMitsunori IwamuroShuichiro AdachiTetsuya SatoKeiko Kizawa
H10P 32/171H10P 32/141H10P 32/19H10F 71/128H10F 71/121H10F 77/16H10F 77/12H10F 77/211H01L 31/022425H01L 31/1864C03C 8/16C03C 8/18Y02E10/50Y02P70/50Y02E10/547
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Claims
Abstract
The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
Claims
exact text as granted — not AI-modified1 . A composition tor forming a p-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder includes an acceptor element and a total amount of a life time killer element In the glass powder is 1000 ppm or less.
2 . The composition for forming a p-type diffusion layer according to claim 1 , wherein the acceptor element is at least one selected from boron (B) or aluminum (Al) or gallium (Ga).
3 . The composition for forming a p-type diffusion layer according to claim 1 , wherein the glass powder comprises;
at least one acceptor element-containing material selected from B 2 O 3 , Al 2 O 3 or Ga 2 O 3 ; and at least one glass component material selected from S i O 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl 2 O, SnO, ZrO 2 or MoO 3 .
4 . The composition for forming a p-type diffusion layer according to claim 1 , wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au).
5 . A method of forming a p-type diffusion layer, the method comprising:
applying the composition for forming a p-type diffusion layer of claim 1 ; and conducting thermal diffusion treatment.
6 . A method of producing a photovoltaic cell, the method comprising:
applying, on a semiconductor substrate, the composition for forming a p-type diffusion layer of claim 1 ; conducting a thermal diffusion treatment to form a p-type diffusion layer; and forming an electrode on the p-type diffusion layer.Join the waitlist — get patent alerts
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