Semiconductor device

Abstract

The present invention provides a semiconductor device that ensures both the breakdown voltage characteristic and specific on-resistance characteristic required for a high-voltage semiconductor device and that includes a gate over a substrate, a source region formed at one side of the gate, a drain region formed at the other side of the gate, and a plurality of device isolation films formed between the source region and the drain region, below the gate.

1 - 12 . (canceled) 
     
     
         13 . A semiconductor device comprising:
 a first-conductivity-type substrate;   a first-conductivity-type first well and a second-conductivity-type second well formed over the first-conductivity-type substrate;   a gate formed over the first-conductivity-type substrate so as to overlap with the first-conductivity-type first well and the second-conductivity-type second well;   a second-conductivity-type source region formed in the first-conductivity-type first well, at one side of the gate;   a second-conductivity-type drain region formed in the second-conductivity-type second well, at the other side of the gate; and   a plurality of device isolation films formed in the second-conductivity-type second well, below the gate.   
     
     
         14 . The semiconductor device of  claim 13 , wherein the first-conductivity-type first well and the second-conductivity-type second well that face each other below the gate, are spaced at a predetermined distance from each other or come into contact with each other. 
     
     
         15 . The semiconductor device of  claim 13 , wherein the plurality of device isolation films have the same linewidth or the linewidth thereof decreases gradually in accordance with the direction from the drain region toward the source region. 
     
     
         16 . The semiconductor device of  claim 13 , wherein the plurality of device isolation films have the same depth or the depth thereof decreases gradually in accordance with the direction from the drain region toward the source region. 
     
     
         17 . The semiconductor device of  claim 13 , wherein, among the plurality of device isolation films, a device isolation film located closest to the drain region is in contact with the drain region. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the device isolation film located closest to the drain region has the largest linewidth and depth among the plurality of device isolation films. 
     
     
         19 . The semiconductor device of  claim 13 , wherein the plurality of device isolation films comprise a structure formed by a shallow trench isolation (STI) process.