Etchant composition and manufacturing method for thin film transistor using the same

Abstract

An etchant composition includes ammonium persulfate (((NH 4 ) 2 )S 2 O 8 ), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

What is claimed is: 
     
         1 . An etchant composition comprising: ammonium persulfate (((NH 4 ) 2 )S 2 O 8 ), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water. 
     
     
         2 . The etchant composition of  claim 1 , further comprising: an assistance oxidizer. 
     
     
         3 . The etchant composition of  claim 2 , wherein a content of the assistance oxidizer is about 0.1 wt % to about 2 wt %. 
     
     
         4 . The etchant composition of  claim 3 , wherein the assistance oxidizer includes one selected from a group consisting of phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ), acetic acid (CH 3 COOH), perchloric acid (HClO 4 ), and hydrogen peroxide (H 2 O 2 ). 
     
     
         5 . The etchant composition of  claim 1 , wherein
 the ammonium persulfate content is about 0.1 wt % to about 20 wt %, the azole-based compound content is about 0.01 wt % to about 2 wt %, the water-soluble amine compound content is about 0.1 wt % to about 5 wt %, the sulfonic acid-containing compound content is about 0.1 wt % to about 10 wt %, and the nitrate-containing compound content is about 0.1 wt % to about 10 wt %.   
     
     
         6 . The etchant composition of  claim 5 , wherein the phosphate-containing compound content is about 0.1 wt % to about 5 wt %. 
     
     
         7 . The etchant composition of  claim 6 , wherein the chloride-containing compound content is about 0.001 wt % to about 1 wt %. 
     
     
         8 . The etchant composition of  claim 1 , wherein the azole-based compound includes one selected from the group consisting of benzotriazole, aminotetrazole, imidazole, and pyrazole. 
     
     
         9 . The etchant composition of  claim 1 , wherein the water-soluble amine compound includes one selected from a group consisting of glycine, iminodiacetic acid, lysine, threonine, serine, asparaginic acid, parahydroxyphenyl glycine, dihydroxyethyl glycine, alanine, anthranilic acid, tryptophan, sulfamic acid, cyclohexylsulfamic acid, aliphatic amine sulfonic acid, taurine, aliphatic amine sulfinic acid, and aminoethanesulfinic acid. 
     
     
         10 . The etchant composition of  claim 1 , wherein the sulfonic acid-containing compound includes one selected from the group consisting of methanesulfonic acid (CH 3 SO 3 H), benzenesulfonic acid (C 6 H 5 SO 3 H), and para-toluenesulfonic acid (C 7 H 7 SO 3 H). 
     
     
         11 . The etchant composition of  claim 1 , wherein the nitrate-containing compound includes one selected from a group consisting of ammonium nitrate (NH4NO3), calcium nitrate (Ca(NO3)2), zinc nitrate (Zn(NO3)2), sodium nitrate (NaNO3), aluminum nitrate (Al(NO3)3), barium nitrate (Ba(NO3)2), cerium nitrate (Ce(NO3)3), copper nitrate (Cu(NO3)2), iron nitrate (Fe(NO3)3), lithium nitrate (LiNO3), magnesium nitrate (Mg(NO3)2), manganese nitrate (Mn(NO3)2), silver nitrate (Ag3NO3), and potassium nitrate (KNO3). 
     
     
         12 . The etchant composition of  claim 1 , wherein the phosphate-containing compound includes one selected from a group consisting of sodium dihydrogen phosphate (NaH 2 PO4), disodium phosphate (Na 2 HPO 4 ), trisodium phosphate (Na 3 PO 4 ), ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ), diammonium phosphate ((NH 4 ) 2 HPO 4 ), triammonium phosphate ((NH 4 ) 3 PO 4 ), potassium dihydrogen phosphate (KH 2 PO 4 ), dipotassium phosphate (K 2 HPO 4 ), tripotassium phosphate (K 3 PO 4 ), calcium dihydrogen phosphate (Ca(H 2 PO 4 ) 2 ), dicalcium phosphate (Ca 2 HPO 4 ), and tricalcium phosphate (Ca 3 PO 4 ). 
     
     
         13 . The etchant composition of  claim 1 , wherein the chloride-containing compound includes one selected from a group consisting of hydrochloric acid (HCl), ammonium chloride (NH4Cl), potassium chloride (KCl), iron chloride (FeCl3), sodium chloride (NaCl), ammonium perchlorate (NH4ClO4), potassium perchlorate (K4ClO4), sodium perchlorate (Na4ClO4), and zinc chloride (ZnCl2).