Method for Producing a Radiation-Emitting Component and Radiation-Emitting Component

Abstract

A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

1 . A method for manufacturing a radiation-emitting component with comprising the steps of:
 a) specification of a field distribution of a near field in a direction perpendicular to a main emission axis of the component;   b) determination of an index of refraction profile for the radiation-emitting component along the direction;   c) determination of a structure for the component such that the component has, at least in certain areas, the previously determined index of refraction profile; and   d) formation of radiation-emitting component according to the previously determined structure.   
     
     
         2 . The method according to  claim 1 , wherein the radiation-emitting component has a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence is deposited in step d), the semiconductor layer sequence having an active region provided for emission of radiation, and wherein the index of refraction profile is formed by means of a suitable material composition along a deposition direction for the semiconductor layer sequence of the semiconductor body. 
     
     
         3 . The method according to  claim 1 , wherein a field distribution of the near field along another direction running perpendicular to the main emission axis of the component is specified, and wherein an additional index of refraction profile perpendicular to the main emission axis and to the index of refraction profile is determined in step b), and in step c), the structure of the component is determined in such a manner that the component has the previously determined additional index of refraction profile. 
     
     
         4 . The method according to  claim 1 , wherein for the specified field distribution of the near field the proportionality relationship:
   EN(z)˜exp [−(z/d)α],
   
       holds, where α is an even integer greater than two and d is a measure of the width of the specified field distribution of the near field.