Resistive memory device and fabrication method thereof

Abstract

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the data storage materials formed on the bottom structure in a confined structure perpendicular to the bottom structure, and having a lower diameter smaller than an upper diameter, an upper electrode formed on each of the data storage materials, and an insulation unit formed between adjacent data storage materials.

1 . A resistive memory device, comprising:
 a bottom structure including a heating electrode;   a plurality of openings extending substantially perpendicular to a surface of the bottom structure, each opening, of the plurality of openings, being defined by a structure to have a first diameter, adjacent to the bottom structure, and to have a second diameter, remote from the bottom structure, wherein the first diameter is less than the second diameter;   a data storage material formed in each opening of the plurality of openings;   an upper electrode formed on the data storage material; and   an insulation unit formed between adjacent data storage materials.   
     
     
         2 . The resistive memory device of  claim 1 , wherein the structures include an oxide layer formed on outer circumferences of the data storage material and the upper electrode. 
     
     
         3 . The resistive memory device of  claim 2 , wherein the insulation unit is formed in an insulation layer interposed between the adjacent data storage materials. 
     
     
         4 . The resistive memory device of  claim 1 , wherein the insulation unit is an air-gap. 
     
     
         5 . The resistive memory device of  claim 1 , wherein portions of the structures that define the first diameters have a thickness that is greater than a thickness of portions of the structures that defines the second diameters. 
     
     
         6 . The resistive memory device of  claim 1 , wherein the data storage material includes a phase-change material, a perovskite, or a transition metal oxide. 
     
     
         7 . The resistive memory device of  claim 1 , wherein the upper electrode is formed in each opening of the plurality of openings. 
     
     
         8 . The resistive memory device of  claim 7 , wherein top surfaces of the upper electrodes are substantially co-planar with top surfaces of the structures. 
     
     
         9 . The resistive memory device of  claim 1 , wherein portions of the structures that define the first diameters comprise a first material, and portions of the structures that define the second diameters comprises a second material that is different than the first material. 
     
     
         10 . The resistive memory device of  claim 9 , wherein the first material has a rate of oxidation that is greater than a rate of oxidation of the second material. 
     
     
         11 . The resistive memory device of  claim 9 , where the first material includes silicon germanium and the second material includes polysilicon. 
     
     
         12 - 20 . (canceled)