Solid-state imaging device, imaging system, and copier

Abstract

Each of a plurality of cells includes first and second photoelectric conversion units, and an interval of the first and second photoelectric conversion units in a sub-scanning direction is {n+(b/a)}×x, where a is a period from when the first and second photoelectric conversion units terminate electric carrier accumulation to when the first and second photoelectric conversion units performs the electric carrier accumulation again and next terminate the electric carrier accumulation, b is a gap of timing at which the first and second photoelectric conversion units terminate the electric carrier accumulation, n is an integer of 1 or more, and x is an interval of the first and second photoelectric conversion unit in a main scanning direction.

What is claimed is: 
     
         1 . A solid-state imaging device configured to be relatively scanned in a first direction with respect to an original copy, the solid-state imaging device comprising:
 a plurality of cells; and   a memory, wherein   each of the plurality of cells includes   a first photoelectric conversion unit configured to convert light into electric carriers and accumulate the electric carriers, and   a second photoelectric conversion unit arranged in the first direction with respect to the first photoelectric conversion unit, and configured to convert light into electric carriers and accumulate the electric carriers,   the memory is provided common to the first and second photoelectric conversion units, and holds the electric carriers accumulated by each of the first and second photoelectric conversion units, or signals based on the electric carries, and   an interval of the first and second photoelectric conversion units of one cell of the plurality of cells in the first direction is {n+(b/a)}×x, where a is a period from when the first and second photoelectric conversion units terminate electric carrier accumulation to when the first and second photoelectric conversion units perform the electric carrier accumulation again and next terminate the electric carrier accumulation, b is a gap of timing at which the electric carrier accumulation of the first and second photoelectric conversion units is terminated, n is an integer of 1 or more, and x is an interval of the first photoelectric conversion unit of the one cell of the plurality of cells, and the first photoelectric conversion unit of another cell adjacent to the one cell in a second direction perpendicular to the first direction.   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the interval of the first and second photoelectric conversion units in the first direction is {n+(b/a)+c}×x, and an absolute value of c is a value from 0.1 to 0.15, both inclusive. 
     
     
         3 . A solid-state imaging device configured to be relatively scanned in a first direction with respect to an original copy, the solid-state imaging device comprising:
 a plurality of cells; and   a memory, wherein   each of the plurality of cells includes   a first photoelectric conversion unit configured to convert light into electric carriers and accumulate the electric carriers, and   a second photoelectric conversion unit arranged in a second direction perpendicular to the first direction with respect to the first photoelectric conversion unit, and configured to convert light into electric carriers and accumulate the electric carriers,   the memory is provided common to the first and second photoelectric conversion units, and holds the electric carriers accumulated by each of the first and second photoelectric conversion units, or signals based on the electric carries, and   an interval of the first and second photoelectric conversion units of a same cell in the first direction is (b/a)×x, where a is a period from when the first and second photoelectric conversion units terminate electric carrier accumulation to when the first and second photoelectric conversion units perform the electric carrier accumulation again and next terminate the electric carrier accumulation, b is a gap of timing at which the electric carrier accumulation of the first and second photoelectric conversion units is terminated, and x is an interval of the first and second photoelectric conversion units of the same cell.   
     
     
         4 . The solid-state imaging device according to  claim 3 , wherein the interval of the first and second photoelectric conversion units of the same cell in the first direction is {(b/a)+c}×x, and an absolute value of c is a value from 0.1 to 0.15, both inclusive. 
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein each of the plurality of cells further includes a floating diffusion configured to hold the electric carriers accumulated by each of the first and second photoelectric conversion units, as the memory. 
     
     
         6 . The solid-state imaging device according to  claim 5 , wherein each of the plurality of cells further includes a reset transistor for resetting the floating diffusion to a reset voltage. 
     
     
         7 . The solid-state imaging device according to  claim 5 , wherein each of the plurality of cells further includes a first transfer transistor configured to transfer the electric carriers accumulated by the first photoelectric conversion unit to the floating diffusion, and a second transfer transistor configured to transfer the electric carriers accumulated in the second photoelectric conversion unit to the floating diffusion, and
 the gap of timing at which electric carrier accumulation of the first and second photoelectric conversion units is terminated is a gap between timing at which the first transfer transistor terminates the transfer of the electric carriers from the first photoelectric conversion unit to the floating diffusion, and timing at which the second transfer transistor terminates the transfer of the electric carriers from the second photoelectric conversion unit to the floating diffusion.   
     
     
         8 . The solid-state imaging device according to  claim 6 , wherein each of the plurality of cells further includes a first transfer transistor configured to transfer the electric carriers accumulated by the first photoelectric conversion unit to the floating diffusion, and a second transfer transistor configured to transfer the electric carriers accumulated in the second photoelectric conversion unit to the floating diffusion, and
 the gap of timing at which electric carrier accumulation of the first and second photoelectric conversion units is terminated is a gap between timing at which the first transfer transistor terminates the transfer of the electric carriers from the first photoelectric conversion unit to the floating diffusion, and timing at which the second transfer transistor terminates the transfer of the electric carriers from the second photoelectric conversion unit to the floating diffusion.   
     
     
         9 . The solid-state imaging device according to  claim 1 , wherein the plurality of cells is provided in a same semiconductor substrate. 
     
     
         10 . An imaging system comprising:
 a solid-state imaging device according to  claim 1 ; and   a signal processing unit configured to process an output signal of the solid-state imaging device.   
     
     
         11 . A copier comprising:
 a solid-state imaging device according to  claim 1 ; and   a signal processing unit configured to process an output signal of the solid-state imaging device, wherein   the copier performs printing using a signal processed by the signal processing unit.