Chemical mechanical polishing conditioner with optimal abrasive exposing rate

Abstract

The present invention relates to a chemical mechanical polishing conditioner with optimal abrasive exposing rate, comprising a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles placed on the bonding layer, and the abrasive particles are placed on the substrate by the bonding layer; wherein each abrasive particle has an abrasive exposing rate which is ¼ to ¾ of particle sizes of the abrasive particles and is measured by a height measuring device. Therefore, the chemical mechanical polishing conditioner with optimal abrasive exposing rate of the present invention can control the exposing rate of the abrasive particles to improve the cut rate of the conditioner.

What is claimed is: 
     
         1 . A chemical mechanical polishing conditioner with optimal abrasive exposing rate, comprising:
 a substrate;   a binding layer disposed on a surface of the substrate; and   a plurality of abrasive particles embedded in the binding layer and fixed to the substrate by the binding layer;   wherein each abrasive particle has an abrasive exposing rate which is ¼ to ¾ of particle sizes of the abrasive particles and is measured by a height measuring device.   
     
     
         2 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the abrasive exposing rate means a distance between tips of these abrasive particles and a surface of the binding layer. 
     
     
         3 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the height measuring device has a height gauge and an optical microscope. 
     
     
         4 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 3 , wherein the height gauge is used to measure a height of a specific position, and the specific position is the tips of these abrasive particles or the surface of the binding layer. 
     
     
         5 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 3 , wherein the optical microscope is used to decide a relative position measured by the height gauge. 
     
     
         6 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein 5 to 500 abrasive particles are measured by the height measurement device to obtain the abrasive exposing rate of the measured abrasive particles, 
     
     
         7 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 6 , wherein a difference of the abrasive exposing rate of the measured abrasive particles is less than 1/10 of particle sizes of these abrasive particles. 
     
     
         8 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 6 , wherein the difference of the abrasive exposing rate of the measured abrasive particles is less than 1/20 of particle sizes of these abrasive particles 
     
     
         9 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the abrasive particles are artificial diamond, nature diamond, polycrystalline diamond or cubic boron nitride. 
     
     
         10 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the abrasive particles have a particle size of 30 to 600 μm. 
     
     
         11 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein a composition of the bonding layer or the woven preform is made of a ceramic material, a brazing material, an electroplating material, a metallic material, or a polymer material. 
     
     
         12 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, and combinations thereof. 
     
     
         13 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 11 , wherein the polymer material is epoxy resin, polyester resin, polyacrylic resin, phenolic resin. 
     
     
         14 . The chemical mechanical polishing conditioner with optimal abrasive exposing rate of  claim 1 , wherein the substrate is made of stainless steel substrate, mold steel substrate, metal alloy substrate, ceramic material substrate or polymer material substrate or combinations thereof.